Allicdata Part #: | NAND128W3A2BN6FTR-ND |
Manufacturer Part#: |
NAND128W3A2BN6F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 128Mb (16M x 8) Parallel 5... |
DataSheet: | NAND128W3A2BN6F TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 128Mb (16M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND128-A |
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NAND128W3A2BN6F is a flash memory chip, commonly referred to as a NAND Flash Chip. This type of memory is often used for storage applications in digital cameras, USB flash drives, and Solid State Drives (SSDs). As its name implies, this type of memory consists of hundreds of tiny memory cells arranged in an array. The cells are typically connected to each other via a common bus, allowing the data stored in them to be read and written at high speeds.
This particular NAND Flash chip, the NAND128W3A2BN6F, has a capacity of 128 megabytes (MB) and is rated for a life expectancy of two million write/erase cycles. It also integrates a 4-bit error correction code (ECC) function, allowing it to detect and automatically correct errors that may occur during read or write operations. This ensures that the data stored in this type of memory is reliable and consistent.
The NAND128W3A2BN6F has a wide range of applications, ranging from small consumer electronic devices to large industrial systems. In any memory-intensive application, this type of chip can provide fast, reliable storage for large amounts of data. In addition, its high speed and low power consumption make it an ideal solution for portable devices, such as digital cameras and USB flash drives, where power efficiency is key.
The NAND128W3A2BN6F operates using the NAND flash cell structure. This type of memory uses two transistors per cell to store one bit of data. The cell operates by connecting both transistors to a common source. When a voltage is applied, the two transistors are activated and the cell stores the desired bit. To read the data stored in the cell, the voltage is removed, activating the transistors and the stored bit is retrieved.
In addition to providing fast, reliable storage, the NAND128W3A2BN6F also has the ability to support several types of commands and protocols, including the common NOR Flash command set. This allows the chip to be used in a variety of systems that require ISA/PCI/CFI- compatible components. This makes it a great choice for embedded applications, as well as systems that require high reliability.
Overall, the NAND128W3A2BN6F is an ideal choice for memory intensive applications requiring speed and reliability. Its wide range of applications and support for various protocols make it a great choice for consumer and industrial systems alike. With its long life expectancy and low power consumption, it is easy to see why this particular NAND Flash chip is so popular.
The specific data is subject to PDF, and the above content is for reference
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