Allicdata Part #: | NAND128W3A0AN6-ND |
Manufacturer Part#: |
NAND128W3A0AN6 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC FLASH 128M PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 128Mb (16M x 8) Parallel 5... |
DataSheet: | NAND128W3A0AN6 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 128Mb (16M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND128 |
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NAND128W3A0AN6 Application Field and Working Principle
NAND128W3A0AN6 is a memory component widely used by electronic devices. It is a type of non-volatile memory, meaning it can retain stored information when the power is turned off. It is the most widely used type of memory owing to its low cost and good reliability.
Application Field
NAND128W3A0AN6 is a popular type of memory found in many embedded and personal electronic devices. It is used in digital cameras and camcorders, as well as gadgets such as smartphones and tablets. It is also used as secondary storage in computers and laptops. Some of the most popular applications of NAND128W3A0AN6 include memory cards and USB storage devices.
NAND128W3A0AN6 is perfect for long-term data storage due its low power consumption and wear-leveling technology. It is an ideal solution for increasing the capacity of a device, as its higher density allows for more data storage.
Working Principle
NAND128W3A0AN6 is a type of NAND flash memory. It\'s referred to as “NAND” memory because of the logic gate its based on (called NAND gate), whose name is derived from combining the words “NOT AND”. NAND memory stores information with the use of two transistors per memory cell (as opposed to one transistor in NOR memory). They are arranged in grids and linked by a series of channels.
Due to its design, NAND memory can store multiple bits per cell (1 to 4 depending on the type). It can also be written and erased multiple times without degradation. To write data or change the value of a bit, the cell is charged. To erase the data, the cell is discharged through an erase gate.
NAND memory is fast at reading and writing data, but slower at erasing data. It is also less expensive than NOR memory due to the fewer number of transistors used. NAND memory is usually used to store firmware and applications, while NOR memory is usually used to store instructions such as OS instructions or boot instructions.
Conclusion
NAND128W3A0AN6 is a type of non-volatile memory widely used in embedded and personal electronic devices, digital cameras and camcorders, and memory cards and USB devices. It is based on NAND logic and consists of two transistors per memory cell, allowing for multiple bits per cell. NAND memory is fast at reading and writing data, but slower at erasing data. It is also less expensive than NOR memory.
The specific data is subject to PDF, and the above content is for reference
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