Allicdata Part #: | NAND01GW3B2CZA6E-ND |
Manufacturer Part#: |
NAND01GW3B2CZA6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25... |
DataSheet: | NAND01GW3B2CZA6E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-TFBGA |
Supplier Device Package: | 63-VFBGA (9.5x12) |
Base Part Number: | NAND01G-A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NAND01GW3B2CZA6E Application Field and Working Principle
NAND01GW3B2CZA6E is a type of Memory that is commonly used in today\'s technology world. This type of memory is most commonly used in computers and other digital technology devices, such as cell phones, tablets and digital cameras.
Application Field
NAND01GW3B2CZA6E is used in the storage devices of many popular and well-known electronic products. These include devices such as computers, mobile phones, tablets, and digital cameras. The NAND01GW3B2CZA6E is a type of non-volatile memory, which means it is able to store data without requiring an external power source. This type of memory is often used in applications that require high-capacity data storage and quick access times.
NAND01GW3B2CZA6E memory is also commonly used in embedded systems, such as medical devices, military systems, and consumer electronics. In these applications, the memory is not accessed by the user, but instead is used to store essential data for the operation of the device.
Working Principle
NAND01GW3B2CZA6E memory is based on a technology called Flash memory. This type of memory utilizes a specialized type of electrically-erasable programmable read-only memory, or EEPROM, which is a type of non-volatile memory. Unlike other types of memory, Flash memory can be programmed and erased on the fly, making it an ideal choice for many devices.
The working principle of NAND01GW3B2CZA6E memory is quite simple. When a voltage is applied to the memory cell, an electrical current passes through, causing the cell to store data. When the voltage is removed, the data is retained in the memory cell until it is erased. This type of memory is so reliable because the data is stored in multiple levels of a single memory cell, which allows for more data to be stored.
NAND01GW3B2CZA6E memory is able to provide higher speeds and better reliability than traditional non-volatile memory technologies. This is because the technology utilizes Flash memory which is able to read and write data quickly. Additionally, this type of memory is also reliable because it is designed to withstand physical shocks, such as impacts and vibration, as well as extreme temperatures.
NAND01GW3B2CZA6E is one of the most popular types of Memory used in modern electronic devices. Its ability to store large amounts of data quickly and reliably is what makes it so attractive. Furthermore, its ability to withstand extreme temperatures and shocks make it an ideal choice for embedded systems and other types of digital devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AE-B55-NAND-2 | Phyton Inc. | 259.22 $ | 1000 | ADPT DIP40/BGA55 NAND FLA... |
AE-TS48-NAND-2 | Phyton Inc. | 0.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
AE-TS48-NAND-4 | Phyton Inc. | 105.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
QSHDC-NAND-A | Intel | 175.0 $ | 1000 | ARRIA 10 NAND DAUGHTER CA... |
HPS-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 HPS IO48 NAND ... |
QSHDC-SDM-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 SDM NAND BOOT ... |
NAND01GW3B2AN6F | STMicroelect... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND01GW4B2AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GW3B2AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND128W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A2BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND256R3A2BZA6E | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 55... |
NAND256W3A0AN6 | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A2BN6F | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND512R3A2BZA6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
NAND512W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND512W3A2BN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND01GR3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2CN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GR3B2DZA6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
NAND02GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND02GW3B2DZA6E | Micron Techn... | -- | 23963 | IC FLASH 2G PARALLEL 63VF... |
NAND04GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
NAND512R3A2CZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...