NAND08GW3C2BN6E Allicdata Electronics
Allicdata Part #:

NAND08GW3C2BN6E-ND

Manufacturer Part#:

NAND08GW3C2BN6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8G PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 25ns...
DataSheet: NAND08GW3C2BN6E datasheetNAND08GW3C2BN6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND08G
Description

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Memory is an integral component of almost any computing device or system, and NAND08GW3C2BN6E is a reliable and powerful product in this category of devices. Designed to increase memory capacity and performance, this NAND Flash memory module is compatible with a range of applications and operating systems. In this article, we will explore the application field and working principle of the NAND08GW3C2BN6E.

First, let’s look at the applications of NAND08GW3C2BN6E. It is an ideal solution for applications requiring fast access to large amounts of data. It is used in industries such as automotive, aviation, industrial automation, medical equipment, and consumer electronics. It is well suited for embedded applications such as handheld devices, PDAs, and smart cards. Additionally, it is used in the industrial production and manufacturing of integrated circuits (ICs), which require precise and precise control for various processes. The NAND08GW3C2BN6E also finds use in memory engineering, allowing longer spans of information to be stored and retrieved.

Now, let’s take a look at the working principle of the NAND08GW3C2BN6E. NAND Flash memory is a type of non-volatile memory, meaning that its contents remain even without power being applied. It is based on NAND gates, which are a type of logic gates that work with multiple inputs. They can be thought of as strings of "1"s and "0"s in order to store data or commands. The NAND08GW3C2BN6E is designed to handle a variety of different memory capacities, when the device is used correctly. Memory is stored in cells, which are made up of a transistor, a capacitor and a selector. The NAND08GW3C2BN6E uses NAND gate transistors, which are arranged in a specific pattern that allows for quick and accurate read and write operations.

The NAND08GW3C2BN6E is also equipped with advanced features such as error correction and data integrity protection. These features prevent data loss and corruption, ensuring that information is held safely and accurately. Additionally, the NAND08GW3C2BN6E is capable of data recovery and is compatible with most operating systems. It is also designed to be used in harsh environments, offering reliable operation at extreme temperatures.

In conclusion, the NAND08GW3C2BN6E is a reliable and versatile memory device, finding use in a variety of industrial and consumer applications. It is based on NAND gate transistors and is designed to provide reliable data storage and retrieval, with the additional features of error correction and data integrity protection. Therefore, it is the ideal choice for high-capacity memory solutions.

The specific data is subject to PDF, and the above content is for reference

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