Allicdata Part #: | 497-3618-ND |
Manufacturer Part#: |
NAND512W3A0AV6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC FLASH 512M PARALLEL 48WSOP |
More Detail: | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5... |
DataSheet: | NAND512W3A0AV6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-UFSOP (0.606",15.40mm Width) |
Supplier Device Package: | 48-WSOP (12x17) |
Base Part Number: | NAND512 |
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NAND512W3A0AV6E is a type of nonvolatile memory that stores data even when power is removed from the circuit. It is a type of flash memory that utilizes NAND gates to transfer the data stored in it. The NAND512W3A0AV6E is an 8 GB, 6th-gen NAND flash memory die that is popularly used in applications such as smartphones, tablets, solid state drives, and other embedded systems.
A NAND gate is made up of inverter, transistors, and resistors. The gate’s transistors work as a switch, conducting current when open and blocking when closed. When voltage is applied to the gate’s input, the current flows between the output and input terminal. The output will be a logical low when the voltage is high and vice versa. NAND gates are usually arranged in a series and their combined result determines the output of the gate.
The NAND512W3A0AV6E utilizes the NAND gate architecture to store data. It consists of a 3-D NAND design that is capable of storing 8 Gbits (1 GB) of data or 16 million bytes in 0.25 um die size. The device uses a storage structure called as floating gate transistor (FGT) structure. In this structure, electrons are trapped inside the semiconductor layer of NAND gates for the purpose of data storage. The FGT structure has a unique charge trap-based mechanism that makes it ideal for storing and retrieving data.
The NAND512W3A0AV6E has a high bandwidth, giving it the ability to quickly and reliably store and retrieve data. The device has an array of support features such as ECC (Error-Correcting Code) to help it detect and correct data errors, built-in programming algorithm for improved programming reliability and endurance, and built-in self-refresh for improved data retention. The device also has an advanced wear leveling algorithm for improving data retention.
The NAND512W3A0AV6E is widely used in many applications. It is used in digital cameras, smartphones, PDAs, digital video cameras, solid-state drives, embedded systems, and much more. It is also used in gaming consoles, industrial applications, automotive, and medical industries. It has a high operating speed and can handle multiple applications with seamless performance.
In conclusion, the NAND512W3A0AV6E is a type of nonvolatile memory that utilizes the NAND gate architecture to store data. Its 3-D NAND design is capable of storing 8 Gbits (1 GB) of data in 0.25 um die size, making it an ideal choice for many applications. Its support features such as ECC and wear-leveling algorithms help improve data retention and reliability. With its high bandwidth, it can very quickly store and retrieve data and is a popular choice for many applications in the digital, automotive, medical and industrial industries.
The specific data is subject to PDF, and the above content is for reference
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