NAND512W3A0AV6E Allicdata Electronics
Allicdata Part #:

497-3618-ND

Manufacturer Part#:

NAND512W3A0AV6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC FLASH 512M PARALLEL 48WSOP
More Detail: FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5...
DataSheet: NAND512W3A0AV6E datasheetNAND512W3A0AV6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-UFSOP (0.606",15.40mm Width)
Supplier Device Package: 48-WSOP (12x17)
Base Part Number: NAND512
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NAND512W3A0AV6E is a type of nonvolatile memory that stores data even when power is removed from the circuit. It is a type of flash memory that utilizes NAND gates to transfer the data stored in it. The NAND512W3A0AV6E is an 8 GB, 6th-gen NAND flash memory die that is popularly used in applications such as smartphones, tablets, solid state drives, and other embedded systems.

A NAND gate is made up of inverter, transistors, and resistors. The gate’s transistors work as a switch, conducting current when open and blocking when closed. When voltage is applied to the gate’s input, the current flows between the output and input terminal. The output will be a logical low when the voltage is high and vice versa. NAND gates are usually arranged in a series and their combined result determines the output of the gate.

The NAND512W3A0AV6E utilizes the NAND gate architecture to store data. It consists of a 3-D NAND design that is capable of storing 8 Gbits (1 GB) of data or 16 million bytes in 0.25 um die size. The device uses a storage structure called as floating gate transistor (FGT) structure. In this structure, electrons are trapped inside the semiconductor layer of NAND gates for the purpose of data storage. The FGT structure has a unique charge trap-based mechanism that makes it ideal for storing and retrieving data.

The NAND512W3A0AV6E has a high bandwidth, giving it the ability to quickly and reliably store and retrieve data. The device has an array of support features such as ECC (Error-Correcting Code) to help it detect and correct data errors, built-in programming algorithm for improved programming reliability and endurance, and built-in self-refresh for improved data retention. The device also has an advanced wear leveling algorithm for improving data retention.

The NAND512W3A0AV6E is widely used in many applications. It is used in digital cameras, smartphones, PDAs, digital video cameras, solid-state drives, embedded systems, and much more. It is also used in gaming consoles, industrial applications, automotive, and medical industries. It has a high operating speed and can handle multiple applications with seamless performance.

In conclusion, the NAND512W3A0AV6E is a type of nonvolatile memory that utilizes the NAND gate architecture to store data. Its 3-D NAND design is capable of storing 8 Gbits (1 GB) of data in 0.25 um die size, making it an ideal choice for many applications. Its support features such as ECC and wear-leveling algorithms help improve data retention and reliability. With its high bandwidth, it can very quickly store and retrieve data and is a popular choice for many applications in the digital, automotive, medical and industrial industries.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NAND" Included word is 30
Part Number Manufacturer Price Quantity Description
AE-B55-NAND-2 Phyton Inc. 259.22 $ 1000 ADPT DIP40/BGA55 NAND FLA...
AE-TS48-NAND-2 Phyton Inc. 0.0 $ 1000 ADAPTER SOCKET 48-TSOP TO...
AE-TS48-NAND-4 Phyton Inc. 105.0 $ 1000 ADAPTER SOCKET 48-TSOP TO...
QSHDC-NAND-A Intel 175.0 $ 1000 ARRIA 10 NAND DAUGHTER CA...
HPS-NAND-A Intel 175.0 $ 1000 STRATIX 10 HPS IO48 NAND ...
QSHDC-SDM-NAND-A Intel 175.0 $ 1000 STRATIX 10 SDM NAND BOOT ...
NAND01GW3B2AN6F STMicroelect... -- 1000 IC FLASH 1G PARALLEL 48TS...
NAND01GW4B2AN6E STMicroelect... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
NAND02GW3B2AN6F STMicroelect... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
NAND128W3A0AN6 STMicroelect... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND128W3A0AN6E STMicroelect... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND128W3A0AN6F STMicroelect... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND128W3A0BN6E Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND128W3A0BN6F TR Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND128W3A2BN6F TR Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND256R3A2BZA6E Micron Techn... -- 1000 IC FLASH 256M PARALLEL 55...
NAND256W3A0AN6 STMicroelect... -- 1000 IC FLASH 256M PARALLEL 48...
NAND256W3A0AN6F STMicroelect... 0.0 $ 1000 IC FLASH 256M PARALLEL 48...
NAND256W3A2BN6F STMicroelect... -- 1000 IC FLASH 256M PARALLEL 48...
NAND512R3A2BZA6E STMicroelect... 0.0 $ 1000 IC FLASH 512M PARALLEL 63...
NAND512W3A0AN6 STMicroelect... 0.0 $ 1000 IC FLASH 512M PARALLEL 48...
NAND512W3A2BN6F STMicroelect... 0.0 $ 1000 IC FLASH 512M PARALLEL 48...
NAND01GR3B2BZA6E Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
NAND01GW3B2BZA6E Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
NAND01GW3B2CN6E Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
NAND02GR3B2DZA6E Micron Techn... -- 1000 IC FLASH 2G PARALLEL 63VF...
NAND02GW3B2DN6E Micron Techn... -- 1000 IC FLASH 2G PARALLEL 48TS...
NAND02GW3B2DZA6E Micron Techn... -- 23963 IC FLASH 2G PARALLEL 63VF...
NAND04GW3B2DN6E Micron Techn... -- 1000 IC FLASH 4G PARALLEL 48TS...
NAND512R3A2CZA6E Micron Techn... 0.0 $ 1000 IC FLASH 512M PARALLEL 63...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics