| Allicdata Part #: | NDD60N360U1-35G-ND |
| Manufacturer Part#: |
NDD60N360U1-35G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 114A IPAK |
| More Detail: | N-Channel 600V 11A (Tc) 114W (Tc) Through Hole I-P... |
| DataSheet: |  NDD60N360U1-35G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 50V |
| FET Feature: | -- |
| Power Dissipation (Max): | 114W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I-PAK |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Description
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The NDD60N360U1-35G is a MOSFET – Single FET (Field Effect Transistor) which is used in a variety of applications. The NDD60N360U1-35G provides low on-state resistance and fast switching for a range of circuit designs. It is also suitable for high current switching and can be used in systems requiring a high switching speed. This makes the NDD60N360U1-35G particularly useful in power conversion, motor control, compact high speed switching and high frequency circuits.The structure of a MOSFET is essentially a simple FET, but with the addition of a third electrode. This third electrode is referred to as the gate and is used to control and regulate the flow of electrons through the device. The NDD60N360U1-35G uses a P-channel MOSFET, meaning the gate and transferring electrons are both positive. When the gate is connected to a positive voltage, the flow of electrons from the source to the drain is enabled.By controlling the voltage applied to the gate, the NDD60N360U1-35G can also be used as a variable resistor, adjusting the resistance of the device as needed. This feature makes the NDD60N360U1-35G especially suitable for power supplies, as it is capable of adjusting the resistance depending on the load.The NDD60N360U1-35G has a low threshold voltage, allowing the device to respond quickly to changes in the input voltage. This means the NDD60N360U1-35G is capable of handling high-frequency circuits, making it suitable for motor control, switching and power conversion applications.The NDD60N360U1-35G features a low on-state resistance of just 0.41 Ohms, compared to the standard 0.6-2 Ohms resistance of conventional MOSFETs. This makes the NDD60N360U1-35G an ideal choice for switching high current and for minimizing power loss. The low RDS (on) and RON (on) make it suitable for a variety of circuit designs including high frequency and power conversion designs as well as for EMI (electromagnetic interference) reduction.The NDD60N360U1-35G is also well suited for compact high speed switching applications as its switching speed of up to 2.0nC (at VDD = 10V) enables quick and efficient operation. This is ideal for power conversion design where speed and efficiency are important factors.In short, the NDD60N360U1-35G is a versatile device that is suitable for a range of applications. Its low on-state resistance, fast switching speed and adjustable resistance make it a great choice for high speed switching, power conversion, motor control, and EMI reduction. It is well suited for applications requiring low power losses and high frequency circuits due to its low threshold voltage and low RDS (on) and RON (on). The NDD60N360U1-35G is also suitable for compact designs where a quick switching speed and efficient operation are paramount.
The specific data is subject to PDF, and the above content is for reference
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