| Allicdata Part #: | NDD60N900U1-35G-ND |
| Manufacturer Part#: |
NDD60N900U1-35G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 5.9A IPAK-3 |
| More Detail: | N-Channel 600V 5.7A (Tc) 74W (Tc) Through Hole I-P... |
| DataSheet: |  NDD60N900U1-35G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 50V |
| FET Feature: | -- |
| Power Dissipation (Max): | 74W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I-PAK |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The NDD60N900U1-35G is designed to offer a simple solution within the field of field effect transistors (FETs), specifically Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). This is a single transistor device, with a variable current of between 0.9 and 35 Amps. It has a voltage rating of +/-30V and a gate-threshold voltage of 5V.
The NDD60N900U1-35G is a useful device for a range of applications, such as analogue power control and driving motors. It can be used for switching the on/off functions of LED displays and for various other digital logic functions. Additionally, it can be used for power conditioning, current sensing and ground sensing.
The NDD60N900U1-35G offers a high degree of linearity, along with quick response time. This makes it a highly effective control device, and it is also suitable for a wide range of applications, such as AC to DC convertors, fractional-horsepower motor controls and many other switching systems.
The NDD60N900U1-35G works through the use of a MOSFET’s drain-source current flowing through the device. This is controlled by the gate voltage, which absorbs charges from the gate’s oxide layer. This allows the drain-source current to flow, providing an efficient and low power level for the transistor’s operation.
The NDD60N900U1-35G has a maximum junction temperature of 175C. This means that during operation the temperature of the device should be monitored to ensure it does not exceed this value. Additionally, it can be mounted on a standard through-hole mounting as long as it is properly thermally conductive. It should also be placed in an area free from contamination and direct sunlight or other sources of excessive heat.
The NDD60N900U1-35G provides efficient and reliable MOSFET performance for both analogue and digital applications. With its fast response time and linear operating characteristics, the device is an ideal choice for many power conditioning, motor control, and switching applications. Additionally, the device has a high degree of linearity and can be quickly adapted to a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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