NDD60N745U1-35G Allicdata Electronics
Allicdata Part #:

NDD60N745U1-35G-ND

Manufacturer Part#:

NDD60N745U1-35G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 6.8A IPAK-3
More Detail: N-Channel 600V 6.6A (Tc) 84W (Tc) Through Hole I-P...
DataSheet: NDD60N745U1-35G datasheetNDD60N745U1-35G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 50V
FET Feature: --
Power Dissipation (Max): 84W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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The NDD60N745U1-35G is a single-gate MOSFET transistor designed with low on-resistance, fast switching speed and low voltage. This type of transistor, also known as a metal oxide field effect transistor (MOSFET) was developed in the late 1960s and has been widely used in many areas of electronics, ranging from the basic logic circuits of computers to modern high-efficiency power conversion applications. This high performance MOSFET transistor is designed for DC and pulse applications.

MOSFET transistors have become important components in many electronic systems because of their high switching speed, high switching efficiency, and low on-resistance. They are also used for many types of logic circuits and power converters, especially where a clean and efficient transition from low to high voltages is required. NDD60N745U1-35G makes use of a single gate to control the amount of charge that passes through, meaning that it can switch quickly and efficiently between high and low voltages.

The NDD60N745U1-35G is designed to provide a low on-resistance (RDSON) at low source-drain voltages. This is possible because the MOSFET transistor utilizes a new process that allows for faster, more efficient switching. In addition, this device has a low-voltage breakdown voltage (BVDSS), allowing it to withstand higher voltages before it begins to switch. This type of transistor is ideal for applications where fast, reliable switching is needed and where voltage and power losses need to be kept to a minimum.

The principle of operation of the NDD60N745U1-35G is fairly simple. When the gate voltage, Vg, is applied to the gate terminal, the channel resistance between the source and the drain is reduced, thus allowing the conduction of current through the channel. This current is dependent on the gate voltage, Vg and the channel width. As the gate voltage is increased, the channel resistance is further reduced, resulting in an increase in the current flowing through the channel. This type of transistor is used in power applications such as power switches, converters and amplifiers.

The NDD60N745U1-35G is best suited for applications that require low on-resistance and/or fast switching speeds. These include DC-DC converters, motor control circuits, power amplifiers, high-efficiency digital logic circuits, and power MOSFET applications. It is also a good choice for other applications where low resistance and fast switching speeds are needed, such as for switching high currents in power supplies and digital IC testing.

The NDD60N745U1-35G is an excellent choice for high-efficiency power conversion, fast switching applications, and digital logic circuits. This MOSFET transistor offers high current carrying capacity, low on-resistance, fast switching speeds, and low breakdown voltages, making it an ideal choice for many types of electronics applications. With its advanced technology and performance, the NDD60N745U1-35G will continue to be a popular choice for low voltage and pulse applications.

The specific data is subject to PDF, and the above content is for reference

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