NDD60N550U1-1G

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	550 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	540pF @ 50V
FET Feature:	--
Power Dissipation (Max):	94W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	IPAK (TO-251)
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NDD60N550U1-1G Application Field and Working Principle

NDD60N550U1-1G is a single silicon n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) made by Toshiba Semiconductor, designed for fast switching and low RDS(ON) applications. It is an embedded part that is suitable for many digital and analog applications such as audio player/recorder, display driver and other automotive industries. The NDD60N550U1-1G is available in the TO-252 package, featuring a maximum VDS (drain-source voltage) of 25V. It has an extremely low RDS(ON) of 35mΩ (@VGS 10V) and a maximum drain current of 25A, making it ideal for building high power circuits. The wide temperature range of -55 to150℃ offers extreme durability and reliability for different types of applications.

Working Principle of the NDD60N550U1-1G

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an essential component used in many switching and amplifying applications. A MOSFET has three pins, gate, source and drain, and four distinct operation modes. The NND60N550U1-1G is a n-channel enhancement-mode MOSFET. When the gate-source voltage is less than the threshold voltage, the stored charge on the gate prevents current from passing through the MOSFET, and hence it remains off. When the gate-source voltage exceeds the threshold voltage, the stored charge on the gate is removed, allowing current to flow between the drain and the source. The n-channel MOSFET (NDD60N550U1-1G) is ideal for fast switching applications because of its very low RDS(ON) value and wide temperature range. The low RDS(ON) value reduces power dissipation and produces higher efficiency, while the wide temperature range ensures the stable operation of the switch in different environments.

Applications of the NDD60N550U1-1G

The NDD60N550U1-1G has a wide range of applications in various industries. It is mainly used in applications where fast switching is required such as audio players/recorders, display drivers, automotive circuits and power supplies.In audio players and recorders, the NDD60N550U1-1G is used for controlling the supply voltage for the audio circuits, switching audio signals and for high power applications. In display drivers, the MOSFET can be used to control backlight and LED power supplies.The NDD60N550U1-1G is also used in automotive circuits where reliable operation is required at extreme temperatures. It is used to control power distribution and fuel injectors, as well as providing protection against voltage surges and over-currents. In power supplies, the NDD60N550U1-1G is used as a main switch to control the power supply.In summary, the NDD60N550U1-1G is a single n-channel metal oxide semiconductor field effect transistor with wide temperature range and low RDS(ON) value. It is suitable for fast switching applications in audio players/recorders, display drivers, automotive circuits, and power supplies.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description