Allicdata Part #: | NDD60N745U1T4G-ND |
Manufacturer Part#: |
NDD60N745U1T4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 6.8A DPAK-3 |
More Detail: | N-Channel 600V 6.6A (Tc) 84W (Tc) Surface Mount DP... |
DataSheet: | NDD60N745U1T4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 745 mOhm @ 3.25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 84W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The NDD60N745U1T4G is a single-pole power MOSFET manufactured by IXYS Integrated Circuits. The part is designed for use in applications up to 10A and at voltages up to 75V, making it ideal for use in a variety of industrial and consumer-oriented applications.
The NDD60N745U1T4G is a enhanced-speed logic-level gate-cylinder MOSFET that features an integrated gate-cylinder. This integrated design simplifies device design and assembly considerably over other MOSFET designs and reduces board complexity accordingly. The part is rated for operation up to 10A and to 75V and is capable of dissipating over 2W without a heat sink. The device also features a faster switching time, improved dynamic resistance, and a low-capacitance gate drive.
In terms of performance characteristics, the NDD60N745U1T4G has a very fast switching speed (on the order of nanoseconds) and a low input capacitance that helps reduce switching losses. The device also has a low turn-on voltage and a low gate charge, resulting in a lower overall power loss. The integrated gate-cylinder also helps reduce losses, as it eliminates the need for additional shielding on the MOSFET’s gate leads.
In terms of its actual working principle, the NDD60N745U1T4G is based on the same working principle that is used in all MOSFETs: It works by controlling the flow of electric current in either direction between the source and the drain in response to the voltage applied to its gate. The device is configured so that current can flow between the drain and the source when the voltage applied to the gate is between 0V and the threshold voltage. At this point, the device is considered as “on” or “conductive”. Conversely, when the voltage is below the threshold voltage, the device is considered to be “off” or “non-conductive”.
The specific application fields in which the NDD60N745U1T4G can be used include personal computer power supplies, automotive applications, high-power converters, motor drive and control systems, and lighting and display systems. Its fast switching speed and low input capacitance make it ideal for use in power applications, and its low turn-on voltage and low gate charge make it suitable for use in applications that require precise control of currents and voltages.
Overall, the NDD60N745U1T4G is a high-performance single-pole power MOSFET that has been designed with an integrated gate-cylinder. Its fast switching speed, low input capacitance, and low gate charge make it ideal for use in a variety of industrial and consumer-oriented applications, particularly in personal computer power supplies, automotive applications, and motor drive and control systems.
The specific data is subject to PDF, and the above content is for reference
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