NDD60N550U1T4G

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The NDD60N550U1T4G is a high-performance N-Channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). It is a package-type vertical MOSFET with an N-Channel type. This device can be used in many applications, including digital power applications, such as AC/DC power supplies, lighting applications, designs, automotive solutions, and solar solutions.

Its main benefit is that it combines low on-resistance (RDS) with low gate charge (QG), allowing high-frequency switching of loads with low voltage operation. This MOSFET also provides a low RDS(on) with inverse body diode recovery. This provides improved performance and greater design margin vs. current low RDS(on) FETs.

The NDD60N550U1T4G has a power handling capability of up to 60A at -55°C to 175°C junction temperature range. This device provides a gate threshold voltage (Vth) of 2.2V with low gate input capacitance of 5.5nF/div. The device also has a low gate-source leakage current of 35µA (at 25°C) and a low Coss (Coss = Gate-Body capacitance) of 0.18pf/div.

The NDD60N550U1T4G MOSFET is ideal for power switching applications such as DC-DC converters, inverters, SMPS and motor drives. It is also well suited for light-load applications where the low on-resistance (RDS) and low gate charge (QG) can provide superior switching performances over a wide operating range.

Working Principle

The NDD60N550U1T4G is a four layer single N-Channel MOSFET. It works through the action of minority carriers or electrons. When the gate voltage (Vg) is increased, a voltage induced electric field forms in the depletion region, attracting more electrons and generating more carriers. This is called inversion. The effect is to increase the conductivity of the channel. The device is thus turned “on”. When the gate voltage (Vg) is reduced, the electric field disappears, so the electrons are no longer attracted and the device is “off”.

The NDD60N550U1T4G MOSFET has a breakdown voltage of 650V, and thus can switch higher voltages than other MOSFETs, such as the NDD60N550U1T2G. It also has very low Vth of 2.2V, so it can operate at a higher frequency than other MOSFETs. The device has a low gate input capacitance, which allows for fast switching and high speed operations. Its low RDS(on) (of about 0.03Ω) and low Coss ensure a good thermal performance and efficiency.

The NDD60N550U1T4G also provides a low gate-source leakage current of 35µA (at 25°C) and a low Qg of 4.08nC. This device is designed to operate reliably at high temperatures and is RoHS- compliant.

The NDD60N550U1T4G is a great choice for applications such as DC/DC converters, automotive solutions, motor drives, and industrial inverters. It is a reliable and efficient device that is perfect for many power switching applications.

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