NDD60N745U1-1G

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NDD60N745U1-1G Application Field and Working Principle

The NDD60N745U1-1G is a single N-channel enhancement mode Field Effect Transistor (MOSFET) from ON Semiconductor and is commonly used in low voltage and low power applications. The NDD60N745U1-1G consists of an N-channel MOSFET with a gate, drain and source. This MOSFET is ideal for battery powered or portable applications.

Features

• Voltage (VDS): 60V
• Drain Current (ID): 7.45A
• Dynamic Resistance (RDS(on)): 0.04Ω
• Gate Resistance (RGS): 12Ω
• Drain-Source Capacitance (Cds): 0.80nF
• Package Type: D2Pak

Application Field

The NDD60N745U1-1G MOSFET is typically used in battery operated and hand held devices, switches, LED drivers, power supply and motor control. It is also used in telecommunications, data communication and instrumentation.

The NDD60N745U1-1G offers users higher current carrying capability, faster switching speed, low on-state resistance and superior on/off switching attributes. Due to its excellent characteristics, such as high frequency operation, it is used in various applications including high quality AC/DC converters, DC/DC converters, audio amplifiers and motor control circuits.

Working Principle

A MOSFET is a three layer semiconductor device with an insulated gate. The gate region is isolated from the source and drain regions by a thin layer of insulation on the surface. The drain, source and gate regions are connected to the circuit. When the gate voltage rises above the threshold voltage, it forms a channel between the source and drain, creating a conductive path for current flow. Typically, the size of the MOSFET channel can be efficiently scaled and when the gate voltage is increased, the current flow increases exponentially.

The NDD60N745U1-1G is a vertical DMOSFET technology that uses a vertical N+ as the drain and an N+ as the source. This increases the current carrying capacity of the MOSFET and provides better thermal performance due to the small die size. The gate is made from a high quality aluminum alloy which allows for a longer lifetime and lower On-Resistance. With the gate wirebonded directly to the gate contact, low gate resistance values can be achieved.

Advantages of NDD60N745U1-1G

• Low on state resistance (Rdson Max 0.04 Ohm)
• Low gate charge
• Low input/output capacitance
• Low voltage operation
• Excellent thermal performance
• High current carrying capacity

Conclusion

The NDD60N745U1-1G is a single N-channel enhancement mode Field Effect Transistor (MOSFET) from ON Semiconductor. The device is designed for low voltage and low power applications and offers users higher current carrying capability, faster switching speed, low on-state resistance and superior on/off switching attributes. It is a vertical DMOSFET technology that uses a vertical N+ as the drain and an N+ as the source, offering improved current carrying capacity and thermal performance. It is most commonly used in battery powered and portable applications, switches, LED drivers, power supplies and motor control circuits.

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