Allicdata Part #: | NM27C020Q120-ND |
Manufacturer Part#: |
NM27C020Q120 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC EPROM 2M PARALLEL 32CDIP |
More Detail: | EPROM - UV Memory IC 2Mb (256K x 8) Parallel 120n... |
DataSheet: | NM27C020Q120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - UV |
Memory Size: | 2Mb (256K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 32-CDIP (0.685", 17.40mm) Window |
Supplier Device Package: | 32-CDIP |
Base Part Number: | NM27C020 |
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The NM27C020Q120 is an electrically-erasable programmable read-only memory (EEPROM) IC used in various applications such as electronic beacons, remote control systems, educational toys, remote control modules, automotive processors, and others. The device is manufactured by National Semiconductor Corporation and is designed to provide reliable, non-volatile storage of data and programs.
The NM27C020Q120 is a non-volatile CMOS EEPROM that comes in a variety of packages and packages sizes. It is designed to offer up to 120K bits (or 15 K bytes) of non-volatile memory in an 8-pin dual in-line package (DIP). The device has an operating voltage range of 2.7V to 5.5V and requires a supply voltage of 3.3V to minimize power consumption.
The NM27C020Q120 features fast read and write cycles, allowing high-speed data transfer capabilities. It also supports partial page write operations without the need for any erase cycles. This feature prevents unnecessary data loss due to the erase-before-write requirement of conventional EEPROMs.
The read and write operations are performed using the same pin for both operations. The device is capable of random access reads, enabling the use of random access memory (RAM) as well as EEPROM, allowing users to access data from any location. The device also features extended erase capabilities, enabling larger data blocks to be erased at once.
The NM27C020Q120 is an asynchronous device, meaning that the access time and other timing requirements can be changed at any time during operation. It is also capable of wide temperature range operation (-55°C to +125°C) and is protected against power up voltage surges. The device is also immune to X-ray, gamma radiation and other environmental hazards.
The NM27C020Q120 uses oxide tunneling to store data in non-volatile memory locations. This technology allows the device to store and retrieve data even after power is turned off. The device uses a 6-transistor floating gate architecture to ensure reliability, low power consumption, and protection against data corruption due to power supply disturbances.
The NM27C020Q120 offers 128 K bytes of non-volatile memory in an 8-pin DIP package and is perfect for applications that require data to be stored in a secure location. Its fast read and write times enable high-speed data transfer while its extended erase capabilities make it capable of erasing larger data blocks at once.
The device\'s ability to operate in a wide temperature range makes it suitable for use in harsh environments. The device also offers suitable protection against X-ray, gamma radiation and other environmental hazards, making it an ideal choice for applications where data must be stored securely for long periods of time.
In conclusion, the NM27C020Q120 is an ideal memory device for applications that require a long-term storage solution. Its fast read and write speeds, extended erase capabilities, and wide operating temperature range make it well-suited for various applications, from automotive processors to remote control systems.
The specific data is subject to PDF, and the above content is for reference
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