Allicdata Part #: | NM27C040Q120-ND |
Manufacturer Part#: |
NM27C040Q120 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC EPROM 4M PARALLEL 32CDIP |
More Detail: | EPROM - UV Memory IC 4Mb (512K x 8) Parallel 120n... |
DataSheet: | NM27C040Q120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - UV |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 32-CDIP (0.685", 17.40mm) Window |
Supplier Device Package: | 32-CDIP |
Base Part Number: | NM27C040 |
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NM27C040Q120 is a high-performance CMOS / NMOS 4M-bit (512K x 8-bit) EPROM device developed through advanced CMOS / NMOS LSI technology that generates fewer heat than previous EPROM devices. It offers low power operation, higher speed operation while keeping lower standby current.
Applications of NM27C040Q120
The NM27C040Q120 is typically used for particular applications such as storage of firmware programs, download storage for communications, audio and video data storage, as well as for software development.
The primary application of NM27C040Q120 is its use as a general-purpose EPROM, where the features of fast programming and readout operation, low power operation, low standby current, new-gate CMOS / NMOS LSI technology, and high density make it ideal for applications that require large amounts of data or program storage.
Other applications include industrial automation and control, medical imaging/diagnostics, point-of-sale, communications, automotive and GPS systems, instrumentation and measurement, aerospace, and military systems that require ROM devices to store operational codes and data.
Working Principle of NM27C040Q120
NM27C040Q120 is essentially a memory device designed to hold static data and programs. In operation, the device must be supplied with Vcc and Vss, which represent the supply voltages for the device. The data is stored in the memory cells, which consist of an NMOS N-type transistor and a memory capacitance. Each memory cell is electrically isolated from the other cells with a dielectric insulation layer.
The NM27C040Q120 has a total of 512K (524288) memory cells, each capable of storing one bit (0 or 1) of data. The data is written to the memory by applying a “program” voltage (Vpp) to the selected memory cell. When a write is performed, the programming current flows through the N-type and memory capacitance, resulting in a voltage difference in the memory cell.
To read the stored data, a voltage is applied to the selected memory cell, and the current flowing through the memory cell is analyzed. If the current is higher than a certain threshold, the memory cell contains a 1, and if the current is lower than the threshold, it contains a 0. This process is known as sensing the data stored in the memory cell.
The NM27C040Q120 has an advanced self-timed write operation to minimize the programming duration. It also has advanced write, erase and erase-verification error protection built-in, and supports fast read, write and erasure of data with minimal power consumption.
Conclusion
The NM27C040Q120 is a high-performance CMOS/NMOS 4M-bit (512K x 8-bit) EPROM device developed through advanced CMOS/NMOS LSI technology, offering low power operation, higher speed operation while keeping lower standby current. It is typically used for particular applications such as storage of firmware programs, download storage for communications, audio and video data storage, as well as for software development. Its working principle is based on the sensing of current flowing through the memory cells.
The specific data is subject to PDF, and the above content is for reference
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