NM27C256VE200

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The NM27C256VE200 is a 256Kb high speed, low power, ultraviolet (UV) EPROM and electrically erasable PROM (EEPROM) non-volatile memory from STMicroelectronics. It provides an integrated solution for UV EPROM and EEPROM designs, enabling the use of a single device for both high-speed read-access and EEPROM program operations. The NM27C256VE200 device is intended for use in a wide variety of applications, from computer and video controllers, to in-circuit programming and telemetry applications.The NM27C256VE200 device consists of four main components: a 256Kbits memory array, an external write control/output enable circuit, a write enable generator circuit, and a high-speed read control/output enable circuit. The combination of the four components allows for high-speed access times, low power consumption and robust memory functionality.The memory array of the NM27C256VE200 device consists of eight 256Kbits memory banks, each containing two 64Kbit EPROM cells and one 64Kbit EEPROM cell. Each of the eight memory banks is accessed independently via individual control signals. Additionally, each of the eight memory banks can be programmed, read or erased using either an external programming voltage or an internal back bias generator.The external write control/output enable circuit of the NM27C256VE200 device allows for the simultaneous programming of multiple memory cells in a short period of time. This is achieved by applying a single programming voltage to the appropriate output enable pins. This circuit also provides the output enable control necessary to enable the read operations.The write enable generator circuit of the NM27C256VE200 device is designed to reduce the complexity of programming devices. This circuit eliminates the need for an external write enable signal and operates independently of the read operation, allowing the programmer to perform programming and erasing operations without impacting any ongoing read operations.The high-speed read control/output enable circuit of the NM27C256VE200 device is used to enable fast read operations. This circuit uses an internal clock signal to enable fast access to the data being read from the memory cells. The output enable signal from this circuit is also used to enable the output of valid data from the memory array.The NM27C256VE200 device is suitable for a wide variety of applications. Its fast access times and low power consumption make it ideal for use in video controllers and computer controllers. Its self-programming capability allows for in-circuit programming and telemetry applications. In addition, its high-density architecture allows for larger complex designs to be implemented using a single device.

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