Allicdata Part #: | NM27C128N120-ND |
Manufacturer Part#: |
NM27C128N120 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC EPROM 128K PARALLEL 28DIP |
More Detail: | EPROM - OTP Memory IC 128Kb (16K x 8) Parallel 12... |
DataSheet: | NM27C128N120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 128Kb (16K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP (0.600", 15.24mm) |
Supplier Device Package: | 28-DIP |
Base Part Number: | NM27C128 |
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The NM27C128N120 is a non-volatile memory component with a wide range of applications. It is a 128K, low voltage, 3.3V and 5V and 2.7V single-power NMOS EPROM that holds up to 128K-bytes of data in a range of 8K x 8, 8K x 16, 16K x 8, and 16K x 16 organization configurations. The product offers fast access time and can be used for data storage, programs, and code in industrial, consumer, and automotive applications.
The NM27C128N120 is designed for use in industrial and consumer applications where data storage, program code storage, and/or configuration/calibration storage are needed. The component is capable of fast read access, with a maximum access time of 450ns and a maximum cycle time of 800ns. The component also has a wide operating temperature range, from -40°C to +85°C, making it suitable for a range of industrial applications. Additionally, the component can be programmed using standard EPROM and EEPROM burners, making it a cost-effective solution for many applications.
The NM27C128N120 employs UV Algorithm erasure technology, providing reliable nonvolatile memory and keeping data secure even in the event of power failure. The component is also durable, with a program/erase life cycle of up to 100,000 cycles, making it suitable for use in situations where frequent reprogramming is required.
The NM27C128N120 works on the basis of electrical programming sequences. Electrical programming involves applying a programmed voltage to a selected address, which then sets or clears the cell. Erasure of the memory can be done by applying UV light, which causes shorting out of the tiny storage elements in the EPROM cells. Once the UV light has erased an area, it can be programmed again to any desired values.
In summary, the NM27C128N120 is a non-volatile memory component which can be used for a range of applications, including data and program code storage, configuration and calibration storage, etc. The component possesses fast read access times, wide operating temperature ranges, and UV Algorithm erasure. It is durable with a program/erase life cycle of up to 100,000 cycles and can be programmed with standard EPROM and EEPROM burners, making it a cost-effective solution. Therefore, the NM27C128N120 is highly suitable for industrial and consumer applications where non-volatile memory is required.
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