NP100N04PUK-E1-AY Allicdata Electronics
Allicdata Part #:

NP100N04PUK-E1-AY-ND

Manufacturer Part#:

NP100N04PUK-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 40V 100A TO-263
More Detail: N-Channel 40V 100A (Tc) 1.8W (Ta), 176W (Tc) Surfa...
DataSheet: NP100N04PUK-E1-AY datasheetNP100N04PUK-E1-AY Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The NP100N04PUK-E1-AY is a high power N-Channel Enhancement Mode MOSFET transistor, designed especially for the industrial power applications. It features an advanced vertical power MOSFET process that ensures an extremely low on-state resistance, a fast 6.7ns rising/falling time, and excellent gate charge characteristics. The product can operate at up to 850mA current and has a maximum drain-source voltage of 100V. This product is quite suitable for applications that require high power switching and poewrbss high frequency switching.

The NP100N04PUK-E1-AY is made up of a number of components, with each component working together to achieve the desired output. Firstly, the chip contains a power MOSFET transistor which is responsible for controlling the power flow between the input and the output terminals. It does this by switching the voltage levels of its drain-source pins. The voltage levels can be adjusted by the application of a suitable gate voltage, which is controlled by the external circuitry.

The source pin of the transistor is connected to the Input pin of the device, while its drain is connected to the Output pin of the device. The Gate pin is connected to an external circuitry which supplies the necessary gate voltage to the transistor. The flow of current between the source and drain terminals is determined by the gate voltage supplied by the external circuitry.

The NP100N04PUK-E1-AY has a wide range of applications. It can be used in a variety of applications including motor control, high frequency switching, and power inverters. In motor control applications, the product is used to switch the high current loads, allowing for efficient and accurate control of the motor. In high frequency switching applications, the product can switch current up to 100MHz, allowing for faster operation and higher efficiency. In power inverters, the product is used to switch the large AC currents, allowing for higher efficiency and performance.

In addition to its high power switching capability, the NP100N04PUK-E1-AY also has excellent dynamic characteristics. The product has low gate charge, making it more efficient at switching. It also has a fast 6.7ns rising/falling time, allowing for the product to be used in high speed switching applications.

Overall, the NP100N04PUK-E1-AY is an excellent product for a variety of applications. It features an advanced vertical power MOSFET process which ensures an extremely low on-state resistance, a fast 6.7ns rising/falling time, and excellent gate charge characteristics. It has a wide range of applications including motor control, high frequency switching and power inverters. It is also an efficient product due to its low gate charge and fast rise/fall times.

The specific data is subject to PDF, and the above content is for reference

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