Allicdata Part #: | NP109N055PUK-E1-AY-ND |
Manufacturer Part#: |
NP109N055PUK-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 55V 110A TO-263 |
More Detail: | N-Channel 55V 110A (Tc) 1.8W (Ta), 250W (Tc) Surfa... |
DataSheet: | NP109N055PUK-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta), 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 189nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NP109N055PUK-E1-AY is a single, self-gate field-effect transistor (FET), also known as a single-junction transistor, which is a three-terminal semiconductor device that uses a voltage or current to regulate the conductivity of a channel between the source and drain terminals. It is mainly used for telecommunications, computers, and other electronic applications. Depending on the type of FET, the gate may be connected to a voltage source, a current source, or a capacitor.
NP109N055PUK-E1-AY application fields mainly cover the telecommunications, computer and other modern electronics industry, such as mobile phones, laptops, digital cameras, and other electronic products. This type of transistor also can be used in the medical equipment, which requires a high level of reliability and preciseness.
The working principle of NP109N055PUK-E1-AY is relatively simple and straightforward. The principle is based upon the fact that an electric field can be used to control the current flow through a transistor. This electric field is produced by the gate terminal of the transistor, which is connected to the semiconductor material between the source and drain terminals. When a voltage or current is applied to the gate terminal, an electric field builds up around it, and this electric field will affect the current that flows through the channel controlled by the gate terminal.
When a voltage is applied to the gate terminal, the electric field will cause a change in the conductivity of the channel, which results in either a reduction or increase in the current flowing through it. This change in conductivity can be either positive, meaning that the current will increase, or negative, meaning that the current will decrease.
On the other hand, when a current is applied to the gate terminal, the electric field created by the current will induce a change in the conductivity of the channel. This can be either a positive or negative change in the conductivity depending on the magnitude of the current.
In a nutshell, NP109N055PUK-E1-AY is a self-gate field-effect transistor (FET) that uses an electric field to control the current flowing through it. It is mainly used in telecommunications, computers, and other electronic applications due to its reliability and precision. The working principle is based upon the fact that an electric field can be used to control the current flow through a transistor, which can be either a positive or negative change in conductivity depending on the magnitude of the applied voltage or current.
The specific data is subject to PDF, and the above content is for reference
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