NP100P04PLG-E1-AY Allicdata Electronics
Allicdata Part #:

NP100P04PLG-E1-AYTR-ND

Manufacturer Part#:

NP100P04PLG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 40V 100A TO-263
More Detail: P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surfa...
DataSheet: NP100P04PLG-E1-AY datasheetNP100P04PLG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NP100P04PLG-E1-AY is a Field Effect Transistor (FET) manufactured by NXP Semiconductors and is available in a single gate, standard TO-263-3 (D2PAK) package. The low on-resistance of the NP100P04PLG-E1-AY makes the device ideal for applications that require high switching performance and high power dissipation such as switching regulators, motor controls and DC-DC converters.

The NP100P04PLG-E1-AY is a general N-Channel Enhancement Mode MOSFET, which is a type of FET that is typically used as a switching element in electronic circuits. This device has a maximum drain current rating of 100 amps, an Rds(on) rating of 4 mΩ, and a maximum drain source voltage of 100 volts.

The basic operation of the NP100P04PLG-E1-AY is based around a simple MOSFET switch model. To turn the device on, a gate voltage is applied, causing a channel to be created between the drain and the source contacts. This channel facilitates the flow of current between the two contacts, allowing the device to be used as an on/off switch, or as a variable resistor, with the gate voltage controlling the amount of resistance in the channel.

The NP100P04PLG-E1-AY is an ideal device for applications that require high levels of power dissipation and low on-resistance due to its effective design. The device is manufactured with a thick epitaxial silicon layer, which reduces its on-resistance and ensures superior thermal performance. The device also utilizes ultra-low profile packaging to ensure optimal electrical losses and provide additional space savings.

In addition to its effective packaging, the NP100P04PLG-E1-AY has a very low gate charge, making it suitable for use in applications that require very fast switching speeds. The device also utilizes a low gate voltage rating, reducing the amount of voltage required to switch the device on or off.

Overall, the NP100P04PLG-E1-AY is a high-performance FET device that is ideal for applications requiring high levels of power dissipation and low on-resistance. The device is easy to use and has a wide range of features that make it suitable for use in a variety of different electronic applications.

The specific data is subject to PDF, and the above content is for reference

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