NP109N04PUK-E1-AY

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The NP109N04PUK-E1-AY is a N-Channel Enhancement Mode MOSFET, manufactured by ON Semiconductor. This transistor is designed for a variety of applications, with a superior on-state drain current rating of 114A. It also features a wide input voltage range and temperature operating range, along with low gate-charge and a low drain-source on-resistance. The device is suitable for use in power switches, actuators, and voltage regulators, as well as a range of applications in consumer, automotive, and industrial electronics.

A MOSFET is a type of transistor. The word is an abbreviation for "metal oxide semiconductor field effect transistor". It is a three-terminal, unipolar transistor and is functionally similar to a junction field-effect transistor (JFET). The main difference between the two devices is that the drain current of a MOSFET is controlled by the gate voltage, rather than the drain-to-source voltage, as in the case of a JFET.

The working principle of the NP109N04PUK-E1-AY is based on a MOSFET\'s ability to control the amount of current that can flow through its drain and source terminals, depending on the voltage applied to its gate terminal. The gate voltage effectively acts as a switch, controlling the drain-source current.

When the gate voltage is low, current flow is blocked, i.e. the MOSFET is "on". When the gate voltage increases, the channel between the drain and source terminals widens and current can flow, i.e. the MOSFET is "off". This ability to control current flow through a single device makes MOSFETs a popular choice for applications requiring high-speed switching, as well as for use in power converters and voltage regulators.

The NP109N04PUK-E1-AY is designed for use in a variety of applications, such as power switches, actuators, and voltage regulators. It is also suitable for use in consumer, automotive, and industrial electronics. The device\'s wide voltage and temperature operating range make it a good choice for these applications. In addition, with its high on-state drain current rating, low gate-charge, and low drain-source resistance, the NP109N04PUK-E1-AY is a cost-effective solution for applications that require high current handling capability.

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