| Allicdata Part #: | NP100P04PDG-E1-AY-ND |
| Manufacturer Part#: |
NP100P04PDG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET P-CH 40V 100A TO-263 |
| More Detail: | P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surfa... |
| DataSheet: | NP100P04PDG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 15100pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 320nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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.NP100P04PDG-E1-AY is a high current, low on-resistance, logic level power MOSFET designed for use in medium to high power applications requiring high switching speeds. It is widely used for high-end applications such as motor control, sound card power supplies and high-current switching. This MOSFET is constructed using a high-purity silicon substrate with a gold-aluminum-palladium-nickel-copper gold bonding wire. It is suitable for use with both low drain and high drain applications. It has excellent current-handling capabilities and is capable of handling up to 20 amps.
The NP100P04PDG-E1-AY application field can be found in motor control, sound card power supplies and any other high-current switching application. It is also used in automotive, consumer electronics, computer, aerospace, medical and communications applications. The advantages of this MOSFET include its low on-resistance, low power consumption, high switching speed and low threshold voltage.
Working principle of the NP100P04PDG-E1-AY MOSFET is based upon the properties of a silicon substrate. A silicon substrate is comprised of atoms which can be used to create a semiconductor material. The number of electrons that can move within the material determines the type of material and is referred to as the conduction band. When a voltage is applied to the MOSFET, it allows the electrons to move and an electric current flows.
When the MOSFET is connected to a power supply, a gate-source voltage is applied. This voltage causes electrons to flow from the gate to the source and through the channel. This movement of electrons creates an electric current between the two terminals. Additionally, the amount of current that flows through the channel can be changed by changing the magnitude of the gate-source voltage. This allows the NP100P04PDG-E1-AY to be used in a variety of applications where high current levels and fast switching speeds are required.
In summary, the NP100P04PDG-E1-AY is a single MOSFET designed for use in medium to high power applications requiring high switching speeds. It has excellent current-handling capabilities and is capable of handling up to 20 amps. The application field of the device covers motor control, sound card power supplies, automotive, computer, and aerospace industries. The working principle of the device is based upon the properties of a silicon substrate. When a voltage is applied to the MOSFET, it allows the electrons to move and an electric current flows. This allows the device to be used in a variety of applications where high current levels and fast switching speeds are required.
The specific data is subject to PDF, and the above content is for reference
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NP100P04PDG-E1-AY Datasheet/PDF