NP100P04PDG-E1-AY Allicdata Electronics
Allicdata Part #:

NP100P04PDG-E1-AY-ND

Manufacturer Part#:

NP100P04PDG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 40V 100A TO-263
More Detail: P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surfa...
DataSheet: NP100P04PDG-E1-AY datasheetNP100P04PDG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NP100P04PDG-E1-AY is a high current, low on-resistance, logic level power MOSFET designed for use in medium to high power applications requiring high switching speeds. It is widely used for high-end applications such as motor control, sound card power supplies and high-current switching. This MOSFET is constructed using a high-purity silicon substrate with a gold-aluminum-palladium-nickel-copper gold bonding wire. It is suitable for use with both low drain and high drain applications. It has excellent current-handling capabilities and is capable of handling up to 20 amps.

The NP100P04PDG-E1-AY application field can be found in motor control, sound card power supplies and any other high-current switching application. It is also used in automotive, consumer electronics, computer, aerospace, medical and communications applications. The advantages of this MOSFET include its low on-resistance, low power consumption, high switching speed and low threshold voltage.

Working principle of the NP100P04PDG-E1-AY MOSFET is based upon the properties of a silicon substrate. A silicon substrate is comprised of atoms which can be used to create a semiconductor material. The number of electrons that can move within the material determines the type of material and is referred to as the conduction band. When a voltage is applied to the MOSFET, it allows the electrons to move and an electric current flows.

When the MOSFET is connected to a power supply, a gate-source voltage is applied. This voltage causes electrons to flow from the gate to the source and through the channel. This movement of electrons creates an electric current between the two terminals. Additionally, the amount of current that flows through the channel can be changed by changing the magnitude of the gate-source voltage. This allows the NP100P04PDG-E1-AY to be used in a variety of applications where high current levels and fast switching speeds are required.

In summary, the NP100P04PDG-E1-AY is a single MOSFET designed for use in medium to high power applications requiring high switching speeds. It has excellent current-handling capabilities and is capable of handling up to 20 amps. The application field of the device covers motor control, sound card power supplies, automotive, computer, and aerospace industries. The working principle of the device is based upon the properties of a silicon substrate. When a voltage is applied to the MOSFET, it allows the electrons to move and an electric current flows. This allows the device to be used in a variety of applications where high current levels and fast switching speeds are required.

The specific data is subject to PDF, and the above content is for reference

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