NP100P06PDG-E1-AY Allicdata Electronics
Allicdata Part #:

NP100P06PDG-E1-AY-ND

Manufacturer Part#:

NP100P06PDG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 60V 100A TO-263
More Detail: P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surfa...
DataSheet: NP100P06PDG-E1-AY datasheetNP100P06PDG-E1-AY Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NP100P06PDG-E1-AY is a type of MOSFET (metal oxide semiconductor field effect transistor), specifically classified as a single MOSFET. It is a three-terminal, high-voltage MOSFET designed to be surface-mounted. It is manufactured by Vishay, and is part of the Powerblock NP Series.

The NP100P06PDG-E1-AY MOSFET is primarily used in adjustable power supplies, switching regulators, variable-frequency drives and uninterruptible power supplies (UPS). Moreover, it can be used in DC to DC converters, choppers, and other power switching applications. It also offers other advantages in comparison to other types of MOSFETs, such as a low input capacitance and a low gate charge.

A MOSFET, such as the NP100P06PDG-E1-AY, operates on the principle of the MOS capacitor. It is composed of two regions: the drain, which is connected to a metal or semiconductor (such as silicon) surface; and the gate, which is electrically insulated from the drain and is connected to a metal or semiconductor surface. When a voltage is applied between the gate and the drain, it forms an electric field. This electric field causes electrons to flow from the drain to the gate, forming an electric current. This current is then modulated by changing the magnitude of the electric field.

The NP100P06PDG-E1-AY MOSFET is specifically designed to provide a very low on-resistance and high power dissipation, which makes it ideal for use in high-power applications. It is capable of operating at a maximum drain-source voltage of 100V and a maximum drain current of 30A. Its on-resistance is typically 1.3 mΩ, with a maximum of 2 mΩ. It has a maximum junction temperature of 175°C and a maximum storage temperature of 150°C.

The NP100P06PDG-E1-AY MOSFET is also designed with a variety of features that make it suitable for use in different types of applications. It has a ESD protection of 8kV HBM, a 100µA gate-source leakage current and an input capacitance of only 16pF. Additionally, it has an ultra-low gate charge of only 10 nC, making it ideal for low-power applications. Furthermore, it has a maximum switching frequency of up to 20kHz, so it can be used in applications that require a fast switching time.

Overall, the NP100P06PDG-E1-AY is an ideal choice for use in high-power, high-frequency applications. It offers a low on-resistance and high power dissipation, as well as a variety of features that make it suitable for many different types of applications. Whether it’s used in adjustable power supplies, switching regulators, or other types of applications, the NP100P06PDG-E1-AY is an excellent choice for a MOSFET.

The specific data is subject to PDF, and the above content is for reference

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