NP100N055PUK-E1-AY Allicdata Electronics
Allicdata Part #:

NP100N055PUK-E1-AY-ND

Manufacturer Part#:

NP100N055PUK-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 55V 100A TO-263
More Detail: N-Channel 55V 100A (Tc) 1.8W (Ta), 176W (Tc) Surfa...
DataSheet: NP100N055PUK-E1-AY datasheetNP100N055PUK-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NP100N055PUK-E1-AY is a single N-channel enhancement mode power field effect transistor. It is one of the most commonly used transistors on the market today and is used in a variety of applications in the industrial, automotive, and consumer electronics industries. Some of the most popular uses of this transistor include power supply circuits, motor drive circuits, IGBT applications, DC/DC converters, power amplifiers, switching applications, and more.

A field effect transistor is essentially an insulated-gate FET (IGFET) which is used as a voltage controlled device. It is composed of four terminals, the source, drain, gate, and body. When a voltage is applied to the gate, a current will flow through the channel between the source and drain, allowing current to pass through the channel. This enables the transistor to act as an electronic switch, which can be used to control an electrical circuit.

The NP100N055PUK-E1-AY has a Drain-to-Source Breakdown Voltage (VDSS) of 55V, a Gate-to-Source Voltage (VGS) of 10V, and a Drain Current (ID) of 1A. Its Rds(on) (drain-to-source on-state resistance) is 2.11 Ohms or less and it has a maximum gate charge (Qg) of 0.43nC. This transistor can withstand a high drain-to-source voltage and have a low on-resistance, making it suitable for a wide range of applications.

The NP100N055PUK-E1-AY is used in a wide variety of applications and designs. It can be used in power supply circuits as it can handle high power switching and current control with its ability to handle multiple voltages. It is also used in motor drive circuits as it can drive large power loads with its low on-resistance capability. Additionally, it can be used in IGBT applications and DC/DC converters and can be used as a switching element for power amplifiers, and other switching applications.

The working principle of the NP100N055PUK-E1-AY is fairly simple. When a voltage is applied to the gate, an electric field is created across the source and drain terminals. This field causes the electrons to be attracted to the positively charged drain, resulting in a current flow between the source and drain. At this point, the transistor acts as an electronic switch and can be used to control the current flow in the circuit.

In conclusion, the NP100N055PUK-E1-AY is a powerful single enhancement mode power FET which is used in a great variety of applications, due to its high breakdown voltage and low on-state resistance. It is one of the most popular transistors available on the market and its working principle is fairly simple. Its ability to handle multiple voltages and drive large power loads makes it a popular choice for power supply, motor, and IGBT circuits.

The specific data is subject to PDF, and the above content is for reference

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