NP90N03VHG-E1-AY

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The NP90N03VHG-E1-AY is a general-purpose N-channel MOSFET from On Semiconductor. It is a single enhancement mode power field-effect transistor (FET). FETs, especially MOSFETs, enjoy widespread use in electronic systems due to their high efficiency, low switching losses and the ability to control a large current with a small control signal. The NP90N03VHG-E1-AY exhibits fast switching characteristics and a low RDS(on) at 4.1V and is therefore suitable for applications such as PWM motor control, high- frequency circuits, and various switching and amplifier circuits.

The NP90N03VHG-E1-AY is designed for applications where the load current may be greater than 5A and the peak voltage on the drain is more than 80V. The low RDS (on) at 4.1V limits losses due to Ohmic heating and therefore helps to maintain high efficiency with large currents. The device also features a tolerance band of 0.15V, which allows it to be used in applications where precise voltage regulation is required. This makes it particularly suitable for motor control applications, where precise speed control requires precise voltage control.

The NP90N03VHG-E1-AY works on the principle of the enhancement mode MOSFET. In an enhancement mode MOSFET, no current can flow through the device until a certain threshold voltage is applied. This threshold voltage is the gate-source voltage necessary to turn on the device and allow current to flow. Once the gate-source voltage exceeds the threshold value, the device will start to conduct and the drain-source voltage will drop. The device will remain on until the gate-source voltage drops back below the threshold voltage.

The power dissipation in a MOSFET is determined by the RDS(on) drop and the load current, so it is important to select a device with a low RDS(on). The NP90N03VHG-E1-AY has an RDS(on) of 1.06Ω which is low enough to minimize losses, even when working at high currents. Another important consideration is the maximum allowable junction temperature. The maximum junction temperature of the NP90N03VHG-E1-AY is 175°C and the junction-to-ambient thermal resistance is 60°C/W.

In summary, the NP90N03VHG-E1-AY is a single enhancement mode power field-effect transistor (FET) and is suitable for applications such as PWM motor control, high- frequency circuits, various switching and amplifier circuits, and any other applications where the load current may be greater than 5A and the peak voltage on the drain is more than 80V. The device features a low RDS(on) at 4.1V and a junction-to-ambient thermal resistance of 60°C/W, making it an excellent choice for power and high-frequency applications. The NP90N03VHG-E1-AY works on the principle of the enhancement mode MOSFET, wherein no current can flow through the device until a certain threshold voltage is applied to the gate-source terminal.

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