NP90N04NUK-S18-AY Allicdata Electronics
Allicdata Part #:

NP90N04NUK-S18-AY-ND

Manufacturer Part#:

NP90N04NUK-S18-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 40V 90A TO-220
More Detail: N-Channel 40V 90A (Tc) 1.8W (Ta), 176W (Tc) Throug...
DataSheet: NP90N04NUK-S18-AY datasheetNP90N04NUK-S18-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Full Pack, I²Pak
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The NP90N04NUK-S18-AY is a single N channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in a Subminiature Plastic package, designed for use in electronic circuits. As a field effect transistor, it is used to amplify and switch electronic signals, including high voltage and power. Due to its low profile, it offers high switching and commutation speeds, and is suitable for broadcast and switching applications.

The NP90N04NUK-S18-AY features an N channel MOSFET with a maximum drain-source breakdown voltage of 100V, a current rating of 42A, and an on-resistance of 0.11Ω. This device also has an RDS(on) test range of 0.2Ω - 0.28Ω at VGS 10V, and a drain current of 42A@VGS 10V. The NP90N04NUK-S18-AY is suitable for general purpose, low power applications, with an operating temperature range of -55°C to +150°C.

The working principle of a MOSFET is similar to that of a normal transistor. It consists of a source, drain, and gate terminals. The gate controls the flow of current between the source and drain by creating an electric field that allows or restricts electrons moving from one side to the other. This electric field is generated by the voltage applied to the gate terminal. The resistance between the source and drain is known as the "channel resistance" and is controlled by the gate voltage.

When a positive voltage is applied to the gate terminal, it creates a positive “inversion layer” between the source/drain which allows current to flow through the device. This is known as enhancement mode, and is the standard mode of operation for NP90N04NUK-S18-AY MOSFET. When the gate voltage is reduced to 0 volts or less, the “inversion layer” is removed and the flow of current between the source and drain is blocked, and this is known as the "depletion mode". This can be used to effectively turn off the device, and this is the off state for MOSFETs.

The application fields for the NP90N04NUK-S18-AY MOSFET range from power supplies to motor control, audio amplifiers, digital circuitry and automotive electronics. The device is ideal for use in linear and switching applications, where it can be used to switch high current, and can be used to increase the efficiency of the system while making it easier to manage. With a low on-state resistance and high off-state resistance, the NP90N04NUK-S18-AY is capable of providing a reliable performance.

In general, the NP90N04NUK-S18-AY is a reliable and powerful field effect transistor that is suitable for a wide range of commercial and industrial applications. Its low on-state resistance and wide operating temperature range make it an ideal choice for low power and switching applications.

The specific data is subject to PDF, and the above content is for reference

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