
NP90N04VUG-E1-AY Discrete Semiconductor Products |
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Allicdata Part #: | NP90N04VUG-E1-AYTR-ND |
Manufacturer Part#: |
NP90N04VUG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH TO-252 |
More Detail: | N-Channel 40V 90A (Tc) 1.2W (Ta), 105W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta), 105W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NP90N04VUG-E1-AY is a N-Channel logic level MOSFET, typically used in digital switching applications. It is designed to provide superior RDS(on) and low gate charge. This MOSFET series features low on-resistance, extremely low gate charge and very good switching characteristics. It also has a high current carrying capacity, making it suitable for many digital switching applications such as dc-dc converters, voltage regulators and motor control circuits.
The NP90N04VUG-E1-AY is a 4-pin, surface-mount MOSFET package. It has a drain, source and gate connecting portion, as well as a sourcePad. The sourcePad connects directly to the source of the MOSFET and provides additional current to the source. The gate connects directly to the gate of the MOSFET and provides a source of voltage to start the transistors conduction.
The NP90N04VUG-E1-AY is typically used as a switch or in a circuit for regulating voltage and current. It can be used in power management systems, power convertors, motor controls, automotive body electronics and other similar types of applications. When used as a switch, it can be used to switch on and off devices or components, regulate voltage and current, and control other digital circuits.
The working principle of the NP90N04VUG-E1-AY is based on the semiconductor effect. When a voltage is applied to the gate of the MOSFET, a transient current will flow between the drain and the source of the MOSFET, depending on the applied gate voltage. This current is controlled by the gate voltage, and can be used to switch on or off components in the circuit. The way the MOSFET responds to a gate voltage is determined by its design, and so it can be optimized to perform specific tasks according to the application.
The NP90N04VUG-E1-AY can be used in many different applications to provide superior performance. It is an ideal choice for applications that require high performance, low power consumption and fast switching times. It can also be used in switch mode power supplies, voltage regulators, motor control circuits and many other types of digital circuits.
In summary, the NP90N04VUG-E1-AY is a 4-Pin, surface-mount MOSFET, typically used in digital switching applications and power management systems. It is designed to provide superior RDS(on) and low gate charge, and its low on-resistance and high current carrying capacity make it suitable for many digital switching applications. The working principle of the NP90N04VUG-E1-AY is based on the semiconductor effect and can be used to switch on and off components or circuits.
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