NP90N04VUG-E1-AY Allicdata Electronics

NP90N04VUG-E1-AY Discrete Semiconductor Products

Allicdata Part #:

NP90N04VUG-E1-AYTR-ND

Manufacturer Part#:

NP90N04VUG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH TO-252
More Detail: N-Channel 40V 90A (Tc) 1.2W (Ta), 105W (Tc) Surfac...
DataSheet: NP90N04VUG-E1-AY datasheetNP90N04VUG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NP90N04VUG-E1-AY is a N-Channel logic level MOSFET, typically used in digital switching applications. It is designed to provide superior RDS(on) and low gate charge. This MOSFET series features low on-resistance, extremely low gate charge and very good switching characteristics. It also has a high current carrying capacity, making it suitable for many digital switching applications such as dc-dc converters, voltage regulators and motor control circuits.

The NP90N04VUG-E1-AY is a 4-pin, surface-mount MOSFET package. It has a drain, source and gate connecting portion, as well as a sourcePad. The sourcePad connects directly to the source of the MOSFET and provides additional current to the source. The gate connects directly to the gate of the MOSFET and provides a source of voltage to start the transistors conduction.

The NP90N04VUG-E1-AY is typically used as a switch or in a circuit for regulating voltage and current. It can be used in power management systems, power convertors, motor controls, automotive body electronics and other similar types of applications. When used as a switch, it can be used to switch on and off devices or components, regulate voltage and current, and control other digital circuits.

The working principle of the NP90N04VUG-E1-AY is based on the semiconductor effect. When a voltage is applied to the gate of the MOSFET, a transient current will flow between the drain and the source of the MOSFET, depending on the applied gate voltage. This current is controlled by the gate voltage, and can be used to switch on or off components in the circuit. The way the MOSFET responds to a gate voltage is determined by its design, and so it can be optimized to perform specific tasks according to the application.

The NP90N04VUG-E1-AY can be used in many different applications to provide superior performance. It is an ideal choice for applications that require high performance, low power consumption and fast switching times. It can also be used in switch mode power supplies, voltage regulators, motor control circuits and many other types of digital circuits.

In summary, the NP90N04VUG-E1-AY is a 4-Pin, surface-mount MOSFET, typically used in digital switching applications and power management systems. It is designed to provide superior RDS(on) and low gate charge, and its low on-resistance and high current carrying capacity make it suitable for many digital switching applications. The working principle of the NP90N04VUG-E1-AY is based on the semiconductor effect and can be used to switch on and off components or circuits.

The specific data is subject to PDF, and the above content is for reference

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