NP90N055NUK-S18-AY

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NP90N055NUK-S18-AY is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for switch and logic level applications. This FET has a trench MOSFET structure and a graphene-sheet packaging design for superior performance. It operates at both low and high drain-source voltages, and its output impedance is very low.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) are widely used in the field of power electronics due to their low drain-source resistance, high input impedance, and low capacitance. MOSFETs are also widely used in digital applications because of their ability to control a small amount of current over a large voltage range.

The NP90N055NUK-S18-AY has an optimized gate-drain structure that allows for fast on/off switching with low total gate charge. It also has a low gate leakage current to ensure high reliability. The device also features high electrostatic discharge (ESD) performance.

The operating parameters of the NP90N055NUK-S18-AY MOSFET are high VDSS (Drain-source voltage) of 60V, low RDS (on) (Drain-source resistance) of 55mΩ, and a fast switching speed of 1.7ns. Its maximum power dissipation is 75W. Its maximum junction temperature is 150⁰C.

The NP90N055NUK-S18-AY MOSFET is suitable for use in motor control, power management, DC-DC converters, and other applications where efficiency and reliability are paramount. It is also used in mobile phones, industrial equipment, and household appliances.

The working principle of the NP90N055NUK-S18-AY MOSFET is simple. When the Gate-Source voltage exceeds the threshold voltage (VGS), the transistor is turned on and conducts the current from drain to source. This process is called “field effect”. The Gate-Source voltage determines the conducting level of the NP90N055NUK-S18-AY MOSFET. When the Gate-Source voltage falls below the threshold voltage, the transistor is turned off and the current flow stops.

In addition to the enhanced performance features provided by the Trench MOSFET structure, the graphene sheet packaging provides efficient thermal conduction. This helps to improve the power capabilities and reduce the thermal runaway by controlling the thermal dissipation of the device.

Overall, the NP90N055NUK-S18-AY MOSFET is a high-performance device with superior capabilities. With its low drain-source resistance, high input impedance, and graphene sheet packaging, it is suitable for use in a wide range of applications. It is an excellent choice for customers who need a reliable and efficient switching solution.

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