
Allicdata Part #: | NP90N04MUG-S18-AY-ND |
Manufacturer Part#: |
NP90N04MUG-S18-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V 90A TO-263 |
More Detail: | N-Channel 40V 90A (Tc) 1.8W (Ta), 217W (Tc) Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta), 217W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 182nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NP90N04MUG-S18-AY is a type of single metal-oxide-semiconductor field effect transistor (MOSFET). It is used in a variety of applications, ranging from digital logic circuits to motor control and power electronics. In this article, we will discuss the application fields of the NP90N04MUG-S18-AY and its working principle.
Application Field of NP90N04MUG-S18-AY
The NP90N04MUG-S18-AY has a wide range of applications due to its high frequency performance, low on-resistance, and low gate-source capacitance. It can be used in high speed switching, DC-DC converters, power supplies, inverters, motor controllers, and other power electronic applications requiring fast switching speeds. It is also commonly used in digital logic circuits, such as flip-flops, memory circuits, and multiplexers.
Working Principle
MOSFETs are voltage controlled devices. This means that they are controlled by the voltage applied to their gate terminal. When a voltage is applied to the gate terminal, it creates an electric field that controls the current flowing between the source and drain. The gate-source voltage of the NP90N04MUG-S18-AY ranges from -3V to +5V. When the voltage is 0V, no current flows between the source and drain. When the voltage is above 0V, current begins to flow between the source and drain. This is called “pinch off”, and it prevents the device from being saturated.
The NP90N04MUG-S18-AY has a low gate-source capacitance, which allows it to switch faster than other types of MOSFETs. This is especially useful in applications that require high-speed switching, such as power supplies, inverters, and motor controllers. The low on-resistance of the device also makes it more efficient in these applications.
Conclusion
The NP90N04MUG-S18-AY is a single metal-oxide-semiconductor field effect transistor that has a wide range of applications. It is commonly used for high speed switching, DC-DC converters, power supplies, inverters, and motor controllers. The device is voltage controlled and has a low gate-source capacitance and low on-resistance, making it an ideal choice for high-speed switching applications.
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