NP90N06VLG-E1-AY Allicdata Electronics

NP90N06VLG-E1-AY Discrete Semiconductor Products

Allicdata Part #:

NP90N06VLG-E1-AYTR-ND

Manufacturer Part#:

NP90N06VLG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 60V 90A TO-252
More Detail: N-Channel 60V 90A (Tc) 1.2W (Ta), 105W (Tc) Surfac...
DataSheet: NP90N06VLG-E1-AY datasheetNP90N06VLG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NP90N06VLG-E1-AY is a single-die MOSFET (Metal Oxide Semiconductor FET) designed for complementary pairs applications. It is designed for use in logic-level gate drivers, high side motor drives, and pulsed flyback and ignition circuits. It is also suitable for other low-side drivers, switch-mode power supplies, and high voltage, high current DC-DC converters. This vertical structure MOSFET uses N-channel MOSFETs with a drain-to-source breakdown voltage of 30V and a drain current of 90A. This device is rated for up to 175V and can handle continuous currents up to 10A. These features make it well suited for many different applications.

The NP90N06VLG-E1-AY is a single-die MOSFET, meaning there is only one FET (field-effect transistor) inside the package. This type of FET is useful for controlling the amount of current that can flow into a circuit. It operates by allowing electrons to flow from the source to the drain when a voltage is applied to the gate. This allows for very efficient control of current.

The working principle of a MOSFET is based on the fact that the drain to source current is controlled by the gate voltage. This feature allows the user to precisely control the amount of current that flows through the device. The device is capable of very low resistance values and can be used in a variety of applications. This includes switching power supplies, pulsed flyback circuits, motor drivers, and more.

The NP90N06VLG-E1-AY is an excellent choice for automotive ignition control, as it is designed for use in 12V logic-level gate drivers. It is also suitable for a wide range of low-side drivers, switch-mode power supplies, and high voltage, high current DC-DC converters. The device is capable of safely handling continuous currents up to 10A and breakdown voltages up to 175V. This device therefore provides the user with a very robust and reliable power solution.

The NP90N06VLG-E1-AY is a versatile device capable of being used in a variety of operating environments. It is designed to be able to handle harsh conditions such as high temperature, humidity, and vibration. This means that the device will be reliable and cutting-edge when working in challenging environments. It is also protected against transient voltage and is significantly immune to electrostatic discharge.

In conclusion, the NP90N06VLG-E1-AY is a single-die MOSFET designed specifically for high current applications. This device is extremely versatile and can be used in a variety of low and high voltage applications, such as switching power supplies, motor drives, and more. It can also handle up to 175V and can handle continuous currents up to 10A. This device is also constructed to be tough and reliable, allowing it to handle even the most challenging of environments.

The specific data is subject to PDF, and the above content is for reference

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