NP90N055MUK-S18-AY

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The NP90N055MUK-S18-AY is a single MOSFET that is used for many different applications. It is used most often for switching, as it is able to handle large currents with very low on-state resistance. The low on-state resistance of the device makes it ideal for use in various power switching applications such as power supplies, motor control, and battery charging. The device also has a low gate capacitance, which allows it to be used in high speed switching applications.

The NP90N055MUK-S18-AY is a N-channel enhancement type MOSFET that is made with substrate a 26 V rating. It has a maximum drain current of 55 A and maximum elevation of 180C. The device has a breakdown voltage of 28 V and a threshold voltage of 1.4 V. The device features an industry standard SOT-223 package for easy mounting and compatibility with a variety of power management applications.

The working principle of the NP90N055MUK-S18-AY is based on the oxide layer of the device, which acts as a barrier to allow for the transistor to perform its switching function. A voltage applied to the gate of the device will increase the amount of current that can flow through the device, as the oxide layer becomes thinner and allows for more current to flow. The device operates by having a source terminal at ground and the drain terminal at a high voltage, with the gate voltage determining the amount of current that can flow in the device.

The NP90N055MUK-S18-AY can be used in a wide range of applications, including DC-to-DC converters, power supplies, motor control, and battery charging. It is an ideal choice for high-speed switching applications that require a low on-state resistance and low gate capacitance. The device is capable of handling large current levels and offers very reliable performance. It can also be used in automotive applications such as the power supply for a car’s airbag system.

The NP90N055MUK-S18-AY is a reliable, cost-effective solution for a variety of power management applications. It features a low on-state resistance and low gate capacitance, which makes it ideal for high speed switching applications. The device is also able to handle large currents and offers very reliable performance, making it a great choice for power management applications.

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