NSVBC850CLT1G Allicdata Electronics
Allicdata Part #:

NSVBC850CLT1G-ND

Manufacturer Part#:

NSVBC850CLT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN BIPOLAR 45V SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 225m...
DataSheet: NSVBC850CLT1G datasheetNSVBC850CLT1G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.03711
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The NSVBC850CLT1G is a type of single bipolar transistor. It is also known as a Bipolar Junction Transistor (BJT). These types of transistors have been used for a variety of applications, ranging from low-power analog to more advanced high-speed digital, and are often used with integrated circuits.

This transistor is a PNP (positive-negative-positive) type, which means that the current flow through the base-emitter junction is in the reverse direction of the current flow through the collector-emitter junction. The maximum current gain (hFE) of the transistor is 80, which is relatively high for a single bipolar transistor.

A single-bipolar transistor can be used to create an amplifier or switching device. In order to amplify a signal, a few stages of amplification are needed, each using a single bipolar transistor. Each stage of amplification increases the gain of the signal, and the addition of multiple stages results in a much larger amplified output.

Switching devices, on the other hand, rely on the transistor being used as an on/off switch. When a voltage or current is applied to the base-emitter junction, the current through it either increases or decreases, depending on the type of transistor. This can be used to control the amount of current flowing through a load, such as an LED or a motor.

For the NSVBC850CLT1G, an operating voltage of around 40V is required, and is rated for a maximum current of 500mA. The maximum power dissipation for this transistor is 0.25W, which is relatively low compared to some other transistors. The maximum collector-emitter voltage (VCE) is 40V, with a minimum voltage of 0.3V.

This particular transistor is best suited for low-power applications such as switching circuits, digital logic, and amplifiers. Thanks to its high current gain, it is capable of providing a good amount of amplification without the need for additional transistors. It can also be used in applications such as LEDs, motors, and relays.

In summary, the NSVBC850CLT1G is a single-bipolar junction transistor, ideal for a variety of applications such as logic circuits, amplifiers, and switching devices. It has a maximum current gain of 80, and an operating voltage of 40V. It is suitable for low-power applications such as LEDs, motors, and relays.

The specific data is subject to PDF, and the above content is for reference

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