Allicdata Part #: | NSVBC850CLT1G-ND |
Manufacturer Part#: |
NSVBC850CLT1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN BIPOLAR 45V SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 225m... |
DataSheet: | NSVBC850CLT1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03711 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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The NSVBC850CLT1G is a type of single bipolar transistor. It is also known as a Bipolar Junction Transistor (BJT). These types of transistors have been used for a variety of applications, ranging from low-power analog to more advanced high-speed digital, and are often used with integrated circuits.
This transistor is a PNP (positive-negative-positive) type, which means that the current flow through the base-emitter junction is in the reverse direction of the current flow through the collector-emitter junction. The maximum current gain (hFE) of the transistor is 80, which is relatively high for a single bipolar transistor.
A single-bipolar transistor can be used to create an amplifier or switching device. In order to amplify a signal, a few stages of amplification are needed, each using a single bipolar transistor. Each stage of amplification increases the gain of the signal, and the addition of multiple stages results in a much larger amplified output.
Switching devices, on the other hand, rely on the transistor being used as an on/off switch. When a voltage or current is applied to the base-emitter junction, the current through it either increases or decreases, depending on the type of transistor. This can be used to control the amount of current flowing through a load, such as an LED or a motor.
For the NSVBC850CLT1G, an operating voltage of around 40V is required, and is rated for a maximum current of 500mA. The maximum power dissipation for this transistor is 0.25W, which is relatively low compared to some other transistors. The maximum collector-emitter voltage (VCE) is 40V, with a minimum voltage of 0.3V.
This particular transistor is best suited for low-power applications such as switching circuits, digital logic, and amplifiers. Thanks to its high current gain, it is capable of providing a good amount of amplification without the need for additional transistors. It can also be used in applications such as LEDs, motors, and relays.
In summary, the NSVBC850CLT1G is a single-bipolar junction transistor, ideal for a variety of applications such as logic circuits, amplifiers, and switching devices. It has a maximum current gain of 80, and an operating voltage of 40V. It is suitable for low-power applications such as LEDs, motors, and relays.
The specific data is subject to PDF, and the above content is for reference
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