NSVBC143ZPDXV6T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSVBC143ZPDXV6T1GOSTR-ND |
Manufacturer Part#: |
NSVBC143ZPDXV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP 50V SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVBC143ZPDXV6T1G Datasheet/PDF |
Quantity: | 4000 |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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The NSVBC143ZPDXV6T1G device is a bipolar transistor array in a pre-biased configuration. Transistors are used in a variety of applications, and this transistor array is ideal for use in power management, HVAC systems, digital signal processing, and automotive applications, to name a few. The transistors in this device are composed of n-type and p-type semiconductor material. These transistors form the basis for a pre-biased configuration, which allows for a lower voltage and current application.
The working principle of the NSVBC143ZPDXV6T1G is based on the emission of minority carriers in the N-channel transistor and the reception of majority carriers in the P-channel transistor. The two transistors are positioned and connected in opposite configurations, with one transistor in a current control mode and the other in a voltage control mode. This creates an pre-biased configuration, which features a lower voltage than the standard transistors and requires less current in applications.
When the pre-biased transistor array receives a signal from a power source, it passes the signal through the two transistors. The N-channel transistor emits a negative charge, which reduces the voltage of the signal, and the P-channel transistor, which is set in voltage control mode, increases the voltage of the signal. This allows for more efficient control of current and voltage in applications.
The NSVBC143ZPDXV6T1G pre-biased transistor array has several benefits for applications that require a high degree of power control. It can be used to reduce the amount of current required by applications, as well as providing a lower voltage than standard transistors. In addition, the pre-biased configuration allows for more efficient power management, as well as providing better performance in digital signal processing and automotive applications.
The NSVBC143ZPDXV6T1G pre-biased transistor array is an ideal choice for a variety of power management applications. Its configuration and working principle make it an ideal choice for applications that require a high degree of control, as well as providing a lower voltage and current application than standard transistors. With its efficient power management and excellent performance in digital signal processing and automotive applications, the NSVBC143ZPDXV6T1G device is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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