NSVBAS21HT3G Discrete Semiconductor Products

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The NSVBAS21HT3G is a single-phase ultrafast rectifier diode in a small SOD123 package. It is designed for use in high-frequency power factor correction (PFC) applications. The device is a series of ultrafast rectifiers that achieve extremely low forward voltage drop (Vf) and fast reverse recovery time (trr).

The NSVBAS21HT3G offers several advantages compared to traditional silicon rectifiers. It has an extremely low forward voltage drop of just 0.2V, ensuring low power dissipation and high system efficiency. The reverse recovery time is also much faster than a traditional silicon diode, helping to reduce switching losses. Additionally, the device has very low reverse leakage current and is rated for a reverse voltage of up to 200V.

This diode is suitable for use in high-frequency PFC applications such as those found in switch-mode power supplies and servers. The device is available in a variety of package sizes and can be soldered directly to the PCB. It is also capable of withstanding high operating temperatures and can withstand voltages up to 10K for up to 150°C. Additionally, the diode is RoHS compliant.

The NSVBAS21HT3G is designed using silicon-on-insulator (SOI) technology. This technology reduces the switch-on losses and allows for better thermal performance. The device is also designed to have an extremely fast reverse recovery time and high forward voltage drop, making it suitable for switch-mode power applications. The SOI process also produces high-quality diodes with excellent thermal performance.

The working principle of the NSVBAS21HT3G is quite simple. The diode is essentially two layers of material: a PN junction and a dielectric layer. When a voltage is applied across the diode, current passes through the PN junction and the dielectric layer, creating an electric field. This electric field acts like a one-way road, allowing current to pass through in one direction while blocking current in the opposite direction.

Another key feature of the diode is its reverse protection capability. When a voltage higher than the diode’s reverse breakdown voltage is applied across it, the electric field strength is increased so that current can no longer pass through the PN junction. This prevents any reverse current from flowing, thus protecting the circuit from voltage spikes or surges.

In summary, the NSVBAS21HT3G is a single-phase ultrafast rectifier diode designed for high-frequency PFC applications. The device offers excellent electrical performance, low forward voltage drop, fast reverse recovery time, and low reverse leakage current. The diode is also RoHS compliant and is available in a variety of package sizes. It utilizes an SOI process which provides excellent thermal performance and allows for extremely fast response times.

The device works by utilizing an electric field between a PN junction and dielectric layer to allow current flow in one direction while blocking current in the opposite direction. Additionally, the device is also capable of providing reverse protection for the circuit, making it suitable for a wide range of applications.

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