NSVBC847BDW1T2G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	380mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

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Introduction

NSVBC847BDW1T2G is a bipolar junction transistor array designed by STMicroelectronics and belongs to the Transistors - Bipolar (BJT) - Arrays family. It is especially designed for low power applications and provide unbeatable low capacitance value. Basically, it contains two matched-transistor array, namely PNP and NPN type. The purpose of this transistor array is to produce high output current and to provide excellent isolation between the input and output.

Application field

Since NSVBC847BDW1T2G offers unmatched low capacitance value, it is ideal for low power applications. Furthermore, it can provide enhanced robustness in temperature and optical isolation with the use of advanced insulation technology. Due to these advantages, it is widely used in consumer electronic products, such as domestic audio devices, smartphones, DVD players, TVs, digital cameras etc.Moreover, NSVBC847BDW1T2G is particularly suitable for switching power supplies, as they require high output currents while drawing low input currents. Therefore, NSVBC847BDW1T2G is used in switching power supplies like PC power supplies and LCD/LED monitor power supplies.

Working principle

NSVBC847BDW1T2G consists of a PNP array and a NPN array connected in series. The PNP array acts as a current amplifier for high output current. The NPN array is responsible for providinggalvanic isolation between the input and output.It amplifies the current by using the effect of transistor action. Its operation amplifier is configured in a common-base configuration, which increases the gain but causes the voltage output to be lower than the voltage input.Usually, NSVBC847BDW1T2G is used as a \'bypass\' device, which means that it is used to enable the current to bypass a capacitor with a low capacitance value, thus providing high speed switching in high frequency applications.

Conclusion

In conclusion, NSVBC847BDW1T2G is designed especially for low power applications. It can provide enhanced robustness and unmatched low capacitance value while generating high output current. It is used in consumer electronic products and switching power supplies, such as PC power supplies and LCD/LED monitor power supplies. Its usage as a \'bypass\' device is also helpful in providing high speed switching in high frequency applications.

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