Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta), 178W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3150pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	135nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	30 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	52A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTB52N10G Application Field and Working Principle

The NTB52N10G is a vertical N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general purpose applications. It is a power switch that can be used to control the flow of electrical current within a circuit. It is mainly used in medium-power switch-mode power supplies, motor control circuits and automotive circuits.The NTB52N10G is made up of four separate terminals: the gate (terminal G), the source (terminal S), the drain (terminal D) and the substrate (terminal sub). The source and the drain are heavily doped regions that form a channel through which electrons can flow. The substrate is a conductive conductor, which is usually connected to the drain. The gate is an insulating layer between the source and the drain, and it acts as a kind of "switch" to control the flow of electrons in the channel. The NTB52N10G has an on-resistance of 5.2 ohms, which means that it can handle up to 10A at 20V. When the gate is driven high, current will flow from the source to the drain, thereby allowing electrical current to pass through the MOSFET. Conversely, when the gate is driven low, the current will not flow, effectively shutting off the flow of electrons. This simple principle allows for the NTB52N10G to be used for switching a variety of different appliances and devices on and off.When using the NTB52N10G, the designer must consider the maximum drain-source voltage, the maximum drain current and the power dissipation ratings of the transistor. It is important to maintain the proper operating conditions for the transistor so that it can perform its switching functions efficiently.The NTB52N10G is a popular choice for many applications due to its low on-resistance and robust design. It is well suited for motor control circuits, automotive circuits, and switch-mode power supplies. The MOSFET technology offers several advantages over traditional transistors, such as lower switching and operation losses, higher speed operation and improved reliability.Overall, the NTB52N10G is a reliable and efficient on-off switch for a variety of applications. Its low on-resistance and high switching speeds make it an ideal choice for many designs. Its popularity is due to its robust design and simple switching principle, which make it easy to incorporate into most designs.

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