NTB5405NG Allicdata Electronics
Allicdata Part #:

NTB5405NG-ND

Manufacturer Part#:

NTB5405NG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 116A D2PAK
More Detail: N-Channel 40V 116A (Tc) 3W (Ta), 150W (Tc) Surface...
DataSheet: NTB5405NG datasheetNTB5405NG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 32V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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NTB5405NG is a type of single-channel enhancement-mode power field-effect transistor (MOSFET) that is actively used in a broad field of applications. It is a low-voltage power device, intended for use in switch mode power supplies and other DC voltage-supplied circuits. This type of MOSFET operates as an electronic switch that has been designed to iminently meet the needs of modern electronics. It has low on-resistance and high-frequency operation.

The structure of NTB5405NG is optimized to reduce the on-state resistance and enhance the switching performance. This enables the device to handle greater power. It is basically composed of large-area drain and source and two gate electrodes of gold. Its maximum Drain to Source Voltage (VDS) is rated at 45 V, while the current- conduction capability is rated at a maximum of 22A. It is molded in a plastic package that facilitates easy mounting and handling.

This MOSFET has an excellent switching speed which makes it suitable for high-frequency applications. It has an excellent temperature stability and is considered suitable for a variety of applications such as power switching circuits, consumer, industrial, automotive electronics, audio and video applications. In addition, it can be used in circuits that require an excellent transient response.

When it comes to the working principle, NTB5405NG operates by allowing current to pass through the channel between the drain and source terminals when a voltage is applied between the gate and source terminals. This process is controlled by the input gate voltage, which provides a very high input impedance and permits the device to be easily controlled from a large variety of logic levels. When the gate voltage is low, current does not flow through the drain-source channel, thus turning off the device.

The performance and reliability of modern electronics is heavily dependent on MOSFETs such as NTB5405NG. It is widely used for medium to low voltage, average and high current power applications, providing excellent switching performance and low on-state resistance. Moreover, its small size and convenient packaging have enabled its utilization in many challenging applications such as automotive and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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