NTB5605T4G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	88W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1190pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	140 mOhm @ 8.5A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	18.5A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTB5605T4G Application Field and Working PrincipleThe NTB5605T4G is an enhancement mode vertical DMOS FET (Field Effect Transistor) from ON Semiconductor. It is a discrete component in the Power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) family. This component features a low on resistance per area, allowing up to 2A at a voltage of 12V. It also exhibits a low gate-source threshold voltage, which makes it suitable for use in mobile applications and automotive applications where a low-power draw is desirable.The NTB5605T4G is a single N-channel MOSFET that is used in many different types of applications and is typically suited for power switching circuits, motor control applications and motor drive applications. It is also suitable for audio applications, where its low on-resistance can be utilized to achieve a low-noise output signal.The NTB5605T4G consists of an N-type MOS FET that is fabricated in an integrated circuit format. This allows the transistor to have a low on-resistance, as it is free of contact constraints. The FET can be used in power switching applications as a DC/DC (Direct Current/Direct Current) converter, while also having the ability to function as a DC/AC (Direct Current/Alternating Current) converter.The gate of the NTB5605T4G is electrically isolated from the source and drain terminals. This provides increased insulation between the gate and the source and drain terminals and reduces the risk of leakage currents, thus making the FET suitable for both AC and DC operations. Additionally, the floating gate of the NTB5605T4G provides further insulation, as the MOS FET is not susceptible to any external electrode effects.The NTB5605T4G operates using a gate control mechanism characterized by its low gate-source threshold voltage. This voltage threshold is typically about 4V, enabling the FET to operate as a low current-drain or switching device. Its low on-resistance also makes it useful in power switching applications, where it promotes improved efficiency.The operating voltage capability of the NTB5605T4G is typically between 2V and 12V, making it suitable for use in both automotive and mobile applications. In addition, the FET is able to provide up to 2A at 12V, allowing it to power a variety of components. Moreover, the FET offers excellent on-off control, allowing for superior reliability and fast switching capabilities.In summary, the NTB5605T4G is a single N-channel MOS FET from ON Semiconductor that is suitable for use in power switching applications, motor control and drive applications and for audio applications. It consists of an N-type MOS FET with a low on-resistance and low gate-source threshold voltage and operates in a voltage range of 2V to 12V. Additionally, it offers up to 2A at 12V and excellent on-off control, allowing it to be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description