NTB52N10T4G Discrete Semiconductor Products

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The NTB52N10T4G is a field effect transistor (FET) manufactured by NXP Semiconductors, primarily intended for use in automotive, wireless, and industrial power management applications. The NTB52N10T4G is a single Enhancement Mode (E-Mode) FET, meaning it has no gate connection and switches off when the gate voltage is zero. The single-N-Channel FET is 40V rated at a maximum drain-source voltage, making it well-suited for a variety of DC/DC conversions in which the drain-source voltage is limited. It has a Pulsed Gate Current of 180A and Steady State Gate Current of 20A, making it an ideal FET for switching applications. It also has high temperature junction and storage characteristics, making it suitable for high temperature environments and high temperature applications.

The NTB52N10T4G can be used in a variety of automotive, wireless, and industrial power management applications. In automotive applications, the FET has been used to control the power distribution and output voltage regulation in automotive powertrain systems, as well as for battery management, fuel cell power systems and other power systems. In wireless applications, the FET has been used for RF and microwave signal amplification, signal switching, and signal line isolation. In industrial power management applications, one application is as a converter in power supplies and line-voltage controllers.

The NTB52N10T4G FET is capable of switching at high frequencies and can handle high voltages and currents. The FET has an insulated gate, creating high input resistance, allowing it to switch rapidly with low input capacitance. This allows the device to be used in applications where fast switching is needed, such as in pulse width modulation (PWM) and frequency modulation (FM) control circuits.

The working principle of the NTB52N10T4G is relatively simple. When power is applied to the gate of the FET, a voltage is generated across the gate and drain terminals of the FET. This voltage then creates an electric field which affects the conductivity of the N-channel of the FET. This causes a current to flow from the drain to the source terminal of the FET. The current flowing through the FET is controllable depending on the voltage applied to the gate terminal of the FET.

The NTB52N10T4G FET is a useful FET for a range of applications due to its features, such as its high voltage capabilities, high temperature range, and high switching rate. It is ideal for applications where fast switching is needed, in power management systems, and in RF and microwave applications.

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