NTB5605PG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are vital components of a number of electrical and electronic circuits. FETs and MOSFETs are two types of transistors. The NTB5605PG is a MOSFET that has its own applications fields and working principle.

The NTB5605PG is a single n-channel sensor-gate MOSFET. This MOSFET is used in various applications that leverage its high-speed switching features. It operates on a very low gate-source voltage, as well as low on-resistance (Rdson) and low gate charge. It can also handle current up to 30A at temperatures of up to -55°C and +175°C.

The NTB5605PG is often used in digital amplifier applications due its ability to rapidly switch on and off. Because of this capability, it is used in pulse­width modulators, amplifier motor controls and high-input impedance circuit applications.

The NTB5605PG’s working principle is based on the MOS-effect. This effect occurs when an electric field between a semiconductor gate and the channel causes a change in the width of the channel. The channel width affects the current carried by the channel, making the device a type of voltage-controlled resistor. This voltage change can also affect the conductivity of the channel, making the device an analog switch in some cases.

Before the electric field is established, there is a low resistance between the drain and source. Once a potential difference is established between the gate and the source, the electric field will cause electrons in the channel to be repelled. As a result, the resistance between the drain and source increases significantly. This will in turn restrict the current flow, resulting in the desired switching effect.

The NTB5605PG is a single n-channel sensor-gate MOSFET that has a number of applications due to its high speed switching characteristics and low gate-source voltage. Its working is based on the MOS-effect, in which the electric field is established between the gate and channel can affect the width of the channel, resulting in the device being able to control the current flow.

The specific data is subject to PDF, and the above content is for reference