NTB5605PT4

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NTB5605PT4 (TrenchFET Power MOSFET) is a power MOSFET device from ON Semiconductor. It is a N-channel MOSFET developed for use in high-efficiency, synchronous step-down power conversion circuits, including isolated and non-isolated topologies. The device offers excellent performance and low on-resistance to help reduce total power consumption by reducing conduction losses in the load circuit. The device also features a complementary RDS(on).

Application Field The NTB5605PT4 is suitable for a wide range of power supply, battery charger and other power conversion applications. It is specifically designed for use in synchronous buck converters, and can also be used in Power Factor Correction (PFC) converters, and as a 100V, 60 Amp load switch. The device also supports fast current-mode applications, such as BLDC motor and DC/DC converters.

Working Principle The NTB5605PT4 is a power MOSFET device that utilizes ON Semiconductor\'s trench construction technology to reduce on-resistance and increase efficiency. The device has an N-channel design that reduces internal losses, resulting in lower on-resistance and better thermal performance. The P-MOSFET is also constructed with a low-on-resistance trench construction, which further increases efficiency, reduces power losses during switching operations, and provides better thermal performance.

The device features a low gate charge, typically 26 nC, which drastically reduces switching losses. The NTB5605PT4 also has a low reverse transfer capacitance, typically 4.0 pF, which reduces the operating frequency of the circuit and reduces EMI noise. The device\'s low dynamic impedance and small gate charge result in faster refresh times and improved regulation.

The NTB5605PT4 is designed for high voltage applications. Its breakdown voltage is 12V, with a maximum operating voltage of 100V. Its drain-source breakdown voltage is 160V, meaning the device is suitable for use in high voltage power conversion applications such as PFC converters. It has an operating temperature range of -55°C to 175°C and a drain-source voltage of 60V.

The minimum gate-source voltage (Vgs) of the device is -10V, which allows for faster switching times compared to other MOSFETs which require higher gate-source voltages. The device\'s maximum gate-source voltage can go up to 20V, making it suitable for driving high voltage applications. Additionally, the device has a maximum continuous drain current of 60 Amp, making it suitable for powering high-power loads.

The NTB5605PT4 also offers a low on-state resistance, typically 2.6 mΩ. This helps reduce conduction losses in the load path, resulting in improved overall efficiency. The device is also RoHS compliant and comes in a TO-252 package for easy mounting on a circuit board.

The NTB5605PT4 is an excellent device for use in high voltage power conversion applications. Its low gate charge, low dynamic impedance and low on-resistance make it highly efficient and make it suitable for applications across a wide range of power levels.

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