Allicdata Part #: | NTB5426NT4G-ND |
Manufacturer Part#: |
NTB5426NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 120A D2PAK |
More Detail: | N-Channel 60V 120A (Tc) 215W (Tc) Surface Mount D2... |
DataSheet: | NTB5426NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 215W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTB5426NT4G transistor is a single P-Channel MOSFET which is used for a variety of applications. This type of transistor is most commonly found in power management and digital logic circuits. The NTB5426NT4G is a low- onset voltage MOSFET that operates in the linear range, meaning that it has an asymmetric current/voltage characteristic. This characteristic makes it ideal for use in applications where very high switching speed is required.
The structure of the NTB5426NT4G is highly optimized for switching speed and is capable of delivering high performance in both high frequency and high voltage operation. The NTB5426NT4G has a high-performance metal-oxide semiconductor (MOS) body which helps minimize the on-resistance and capacitance. The gate is insulated from the source and drain by an insulator, usually silicon dioxide (SiO2).
The working principle of the NTB5426NT4G is based on the transfer of electrons between the source and drain terminals through the FET channel. The gate voltage (VGS) controls the gate-to-source voltage (VGS) and affects the current that can flow through the channel. When the gate voltage applied is greater than the threshold voltage, the channel forms between the source and drain, and the device operates in thelinear region.
The NTB5426NT4G has a wide variety of applications in digital logic circuits, power management systems, motor control and other power devices. In digital logic circuits, the NTB5426NT4G is used to switch digital input signals, allowing for fast switching speeds and minimal current consumption. In motor control systems, the NTB5426NT4G can be used to switch between motor directions, allowing for precise motor control in a reliable and efficient manner. In power management systems, the NTB5426NT4G is used to control the power supply to other devices, such as regulating power consumption and maintaining power efficiency.
The NTB5426NT4G transistor is an ideal choice for many power management, motor control and digital logic applications. With its optimized structure and high-performance MOS body, the NTB5426NT4G provides superior performance and is able to operate reliably in a wide range of environments. The device’s linear operating characteristic makes it ideal for applications where extremely high switching speeds are required. The wide variety of applications for the NTB5426NT4G makes it a versatile and reliable solution for many power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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