NTB75N03-006

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The NTB75N03-006 is a single-sided, P-channel discrete enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is used for switching and amplifying electronic signals. The NTB75N03-006 is a low voltage, low side switch MOSFET, ideal for applications requiring a reliable low-level switch. This MOSFET has a breakdown voltage of 60 V, a threshold voltage of 3 V, and a drain-source resistance to 3 Ohms. The maximum power dissipation rating is 1.6 W.

The NTB75N03-006 is commonly used in consumer electronics, particularly where low power consumption is a crucial factor. This MOSFET is found in circuit designs for phone chargers, audio amplifiers, standard microcircuitry, and televisions. In some applications, it is used as a linear amplifier or a switch for controlling Relay circuits. This MOSFET is also used in consumer radios and surge protectors.

The principle of operation for the NTB75N03-006 is based on the Movement of Charge Carriers, specifically the negative electron in N Channel Enhanced MOSFETs. The Negative Charge Carriers’ movement is controlled by the Gate-Source Voltage, which is located between the Gate terminal and the Source terminal. When the voltage applied to the drain source is increased, it causes the Negative Charge carriers (electrons) to become more mobile and an increased amount of current flows through the device. Conversely, when the voltage applied to the drain source is decreased the Negative Charge Carriers become less mobile, resulting in an decreased amount of current flow.

The NTB75N03-006 is an ideal choice for devices such as cell phone chargers and audio amplifiers because of its effective switching characteristics. Its low profile structure and low threshold voltage make it suitable for low voltage applications while its high Breakdown Voltage and low Drain-Source Resistance make it the ideal choice for circuits requiring a reliable low-level switch.

The NTB75N03-006 is an ideal solution for applications where low power consumption is critical and for any circuit designs requiring a reliable, low-level switch. It has a high breakdown voltage and a low drain-source resistance which makes it a versatile MOSFET for a variety of applications, ranging from consumer electronics to audio amplifiers. Its low-profile, single-sided structure provides additional circuit protection and allows for smaller circuit designs that can fit in confined spaces. Ultimately, the NTB75N03-006 is an efficient, cost-effective MOSFET solution perfect for low voltage switch applications.

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