NTB75N06T4G Discrete Semiconductor Products

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The NTB75N06T4G is a type of single N-Channel Enhancement-Mode Field Effect Transistor (MOSFET). It is manufactured using advanced, high voltage, very-high electron mobility technology to ensure high switching performance and low on-state resistance. NTB75N06T4G is capable of blocking up to 75V and has a max current of 21A. This device is typically used in power switching applications, and can be turned on or off with just a logic level(VGS) input such as an MCU.

The working principle of the NTB75N06T4G MOSFET is based on the fact that when an electric field is applied to a metal oxide semiconductor, a conducting channel is created in the oxide material, allowing electric current to flow from the source to the drain. To determine the number of electrons present in the channel, a gate terminal is used to control the number of electrons. Depending on the potential applied to the gate terminal, the flow of electrons can be restricted or allowed. In NTB75N06T4G, if low gate voltage is applied, then electrons can travel freely. A high gate voltage will repel electrons, restricting flow and turning off the device.

The NTB75N06T4G is most commonly used in power switching applications. It can be used to control high-voltage, high-amperage circuits by providing fast switching and low on-state resistance. It can also be used to control high-power loads in applications that require high switching speed and high reliability, such as motor control, lighting control and power supply circuits. In addition, its high breakdown voltage, low on-state resistance and fast switching speed makes it suitable for other applications such as power supply design, electrical transportation systems, and automotive applications.

The NTB75N06T4G can also be used along with driver circuits in high-power applications. These driver circuits provide additional protection by controlling the voltage and current levels applied to the MOSFET by limiting the maximum power output. They also enable overcurrent protection by controlling the on-state resistance of the device. This makes it ideal for use in applications where current surges may occur, such as motors and power supplies.

In summary, the NTB75N06T4G is a robust and reliable single N-Channel Enhancement-Mode Field Effect Transistor (MOSFET). It is capable of blocking up to 75V and has a max current of 21A. Its fast switching speed and low on-state resistance makes it suitable for use in a wide range of applications such as power switching, motor control, lighting control, electrical transportation systems, and automotive applications. Additionally, it can be used in conjunction with driver circuits for high-power applications, providing additional protection and ensuring high reliability.

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