NTB75N03L09T4G

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The NTB75N03L09T4G is a part of STMicroelectronics\' N-channel logic level Enhancement Mode MOSFET. It has been manufactured to meet a wide range of general purpose electronic applications, from low voltage to high power applications. This MOSFET is especially suitable for power supply, high efficiency, low switching losses and low on-resistance applications, including DC-DC and AC-DC converters.

The NTB75N03L09T4G is a N-channel enhancement mode power metal–oxide–semiconductor field effect transistor (MOSFET) designed primarily for use in battery management applications such as protection, switches and power management. It features an ultra low RDS(ON) and fast switching capability with high peak currents. This device works along with a low gate drive voltage, which makes it an ideal choice for use in applications requiring a low voltage gate drive. The N-channel MOSFET provides excellent switching performance in dynamic switching applications.

The NTB75N03L09T4G MOSFET is available in a space-saving DPAK (SMD) package. It has a low on-resistance of 0.3 ohms max, and can operate at high temperature at power ratings up to 75V and 3 A. The maximum reverse drain-source voltage is -63V, which is suitable for automotive electronics, as well as non-automotive. The maximum gate-source voltage is +20V, and the maximum gate-drain voltage is +30V. The NTB75N03L09T4G is a logic level device, which means it can operate down to a low gate drive of 4.5V, and still provide its peak current.

The NTB75N03L09T4G MOSFET is a versatile component that can be used in a variety of fields and applications, including automotive, industrial, medical, telecom and consumer electronics. In automotive applications it can be used in motor control, driver disabling, power management, lighting and HVAC control. In industrial applications it can be used in SMPS, AC and DC motor control, power management, module packaging, energy metering and solar panel control. In telecom and consumer electronics applications it can be used in lighting, appliance control and DC-DC converters.

The NTB75N03L09T4G MOSFET works by allowing charge carriers to flow from the drain to the source, when the gate voltage is greater than the threshold voltage. In this mode, the NTB75N03L09T4G device is said to be "enhanced," and current will flow in the channel. However, when the reverse bias voltage on the device is too high, the NTB75N03L09T4G\'s breakdown voltage is exceeded, and the device is said to be "saturated." The breakdown voltage of the NTB75N03L09T4G for the given application is generally driven well below the device\'s rated max value for safety.

In conclusion, the NTB75N03L09T4G MOSFET is a reliable and versatile power device suitable for a wide range of applications. It has a low on-resistance, fast switching capability and a low gate-voltage requirement. The device can operate in a variety of fields including automotive, industrial, telecom, consumer electronics and medical applications.

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