NTB75N06G

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NTB75N06G, a member of the NTD family of advanced power Field Effect Transistors (FETs), combines low RDS_(on) with fast switching speeds and offers a high level of power density. Featuring a robust design and excellent thermal characteristics, NTB75N06G is well-suited for a variety of applications ranging from those in the computing, networking, lighting and automotive sectors.

The NTB75N06G is a N-channel enhancement mode MOSFET constructed with a monolithic base. It is rated with pinch-off voltage (V_p) of -4.5V, which offers fast and reliable switching under typical gate drive conditions. The device offers maximum gate-source voltage (V_GS) of ± 20V and maximum drain current (I_D) of 16A. The transistor exhibits a high maximum drain-source voltage (V_DS) of 75V and attractive on-state resistance (R_DS) of only 0.0006Ω with low Q_g (gate charge) of only 0.22nC.

Designed specifically to meet the requirements of high power conditioning and converters, the NTB75N06G delivers the optimum combination of drain current capability, fast switching speed and low on-state resistance. Like all members of the NTD family, NTB75N06G is built for high-frequency applications, making it particularly suitable for PWM control systems. It is also suitable for use as an adjustable switch in many applications such as in solar inverters, motor controllers, welding machines, battery chargers and Point of Load (POL) converters.

To understand how the NTB75N06G operates, the idea of a drain-gate-source relationship must first be established. All MOSFETs are unipolar, allowing current to flow only in one direction. The NTB75N06G works in much the same way. It has an N-channel as its basis, which means that current only flows from the source to the drain when a positive voltage is applied to the gate. When a negative voltage is applied, the drain-source channel is reverse biased and the flow of current is blocked.

Another way to understand the NTB75N06G operation is to recognize that the gate-source voltage (V_GS) creates a channel between the drain and the source. When V_GS is above the Pinch-off voltage (V_p), the channel between the drain and the source is created and allows current to flow. This is called the enhancement mode. As the gate voltage is increased even further, the channel between the drain and the source can become wider, allowing more current to flow.

When the NTB75N06G is used in a switching application, the drain current (I_D) is controlled by the gate-source voltage. When the Gate-source voltage falls below the Pinch-off voltage, the device will switch off. This is important to keep in mind since any voltage applied to the gate over this threshold could possibly cause the device to switch on unexpectedly. By using a proper gate-drive circuit, the NTB75N06G can be operated at peak efficiency while keeping the gate-source voltage within the safe operating window.

In short, NTB75N06G is an N-channel enhancement mode MOSFET that combines low RDS_(on) with fast switching speeds. It is well-suited for power conditioning, converters, phase control and many other high-frequency applications. It provides a high level of power density, attractive on-state resistance and fast, reliable switching under typical gate drive conditions. It also offers a maximum drain current of 16A, ± 20V gate-source voltage and Pinch-off voltage of -4.5V.

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