NTB75N03RT4

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The NTB75N03RT4 is a MOSFET (metal-oxide-semiconductor field-effect transistor) developed by ON Semiconductor. It is a single, non-polarized device, known as a enhancement-mode MOSFET. This type of transistor is used for applications such as switching, amplifying, and voltage level shifting.

The NTB75N03RT4 is from the N series of metal-oxide-semiconductor field-effect transistors made by ON Semiconductor. These types of transistors have a number of field-effect transistor configurations, such as the enhancement-mode, n- and p-channel, depletion-mode, and non-polarized or symmetrical transistors. The N series is designed to switch low-voltage signals and exhibit very low leakage and static drain-to-source breakdown.

The NTB75N03RT4 is a single, non-polarized enhancement-mode MOSFET. Using an external gate bias, this type of transistor allows for the regulation of current between source and drain terminals. This type of device can be used in a variety of applications, from voltage-level conversion to power management and logic level-shifting. The NTB75N03RT4 can also be used for switching applications where current must be regulated, such as in power distribution systems.

The NTB75N03RT4 is designed to operate in environments with a maximum operating temperature of 125 °C, as well as a maximum storage temperature of -55 to +125 °C. It is designed to have low on-resistance, fast switching time, and improved thermal performance. It also has a low gate threshold voltage and can handle maximum operating gate voltage of up to 18V.

The working principle of the NTB75N03RT4 is based on the fact that the device modulates current flow between source and drain terminals in response to the gate voltage. As the gate voltage is increased, electrons are attracted to the gate and more current is allowed to flow from source to drain. Conversely, if the gate voltage is decreased, fewer electrons are attracted to the gate, thus reducing the current flow from source to drain. This allows for current control between the source and drain in response to gate voltage, making the NTB75N03RT4 an ideal device for switching and level-shifting applications.

In summary, the NTB75N03RT4 is a single, non-polarized enhancement-mode MOSFET developed by ON Semiconductor. It is designed for applications such as switching, amplifying, and voltage level shifting, and is designed to have low on-resistance, fast switching time, and improved thermal performance. The working principle of the NTB75N03RT4 is based on the fact that the device modulates current flow between source and drain terminals in response to the gate voltage. This makes the NTB75N03RT4 an ideal device for switching and level-shifting applications.

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