
Allicdata Part #: | NTB75N03-06T4OS-ND |
Manufacturer Part#: |
NTB75N03-06T4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 75A D2PAK |
More Detail: | N-Channel 30V 75A (Tc) 2.5W (Ta), 125W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5635pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 37.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTB75N03-06T4 is a type of silicon n-channel surface-mount MOSFET (metal-oxide-semiconductor field-effect transistor) device. It was designed for use in space-constrained applications and provides high performance and low power dissipation in a compact surface-mount package. It is widely used in various fields such as automotive, consumer electronics, and industrial applications.
The NTB75N03-06T4 operates on depletion mode and its gate source voltage is lower than the voltage gate source voltage of the same type of p-channel device. This device features high-speed switching, which makes it ideal for applications where power savings and fast switching speed is essential. It is also known for its very low on-resistance and very low gate charge. This makes it a popular choice for various high-side switching applications.
The working principle of the NTB75N03-06T4 is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) structure. This device operates by controlling the current passing through the channel between the source and drain by applying gate voltage. When a positive voltage is applied to the gate, the channel is opened and current begins to flow. The current flow is dependent on the applied gate voltage, which can be adjusted to control the current passing through the device.
The NTB75N03-06T4 has a wide range of application fields such as automotive, consumer electronics and industrial applications. It is an excellent choice for power savings, fast switching speed, and high voltage operation in switching applications. This device can be used in power supply and voltage regulator circuits, line drivers and receivers, as well as motor control. This device can also be used in high speed switching applications such as logic circuits, timers, display drivers and PWM switch-mode power supplies.
In conclusion, the NTB75N03-06T4 is a powerful and efficient silicon n-channel surface-mount MOSFET device that provides excellent performance in space-constrained applications. It is known for its high-speed switching and low power dissipation, and is widely used in various fields such as automotive, consumer electronics, and industrial applications. The device is an ideal choice for power savings, fast switching speed, and high voltage operation in switching applications.
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