NTB75N03-06T4 Allicdata Electronics
Allicdata Part #:

NTB75N03-06T4OS-ND

Manufacturer Part#:

NTB75N03-06T4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 75A D2PAK
More Detail: N-Channel 30V 75A (Tc) 2.5W (Ta), 125W (Tc) Surfac...
DataSheet: NTB75N03-06T4 datasheetNTB75N03-06T4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTB75N03-06T4 is a type of silicon n-channel surface-mount MOSFET (metal-oxide-semiconductor field-effect transistor) device. It was designed for use in space-constrained applications and provides high performance and low power dissipation in a compact surface-mount package. It is widely used in various fields such as automotive, consumer electronics, and industrial applications.

The NTB75N03-06T4 operates on depletion mode and its gate source voltage is lower than the voltage gate source voltage of the same type of p-channel device. This device features high-speed switching, which makes it ideal for applications where power savings and fast switching speed is essential. It is also known for its very low on-resistance and very low gate charge. This makes it a popular choice for various high-side switching applications.

The working principle of the NTB75N03-06T4 is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) structure. This device operates by controlling the current passing through the channel between the source and drain by applying gate voltage. When a positive voltage is applied to the gate, the channel is opened and current begins to flow. The current flow is dependent on the applied gate voltage, which can be adjusted to control the current passing through the device.

The NTB75N03-06T4 has a wide range of application fields such as automotive, consumer electronics and industrial applications. It is an excellent choice for power savings, fast switching speed, and high voltage operation in switching applications. This device can be used in power supply and voltage regulator circuits, line drivers and receivers, as well as motor control. This device can also be used in high speed switching applications such as logic circuits, timers, display drivers and PWM switch-mode power supplies.

In conclusion, the NTB75N03-06T4 is a powerful and efficient silicon n-channel surface-mount MOSFET device that provides excellent performance in space-constrained applications. It is known for its high-speed switching and low power dissipation, and is widely used in various fields such as automotive, consumer electronics, and industrial applications. The device is an ideal choice for power savings, fast switching speed, and high voltage operation in switching applications.

The specific data is subject to PDF, and the above content is for reference

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