NTB75N03RT4G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.25W (Ta), 74.4W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1333pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13.2nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.7A (Ta), 75A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

NTB75N03RT4G is a n-channel enhancement mode enhancement mode power field-effect transistor (MOSFET)designed to be used in a variety of applications. It has excellent high temperature performance, high breakdown voltage, and high current handling capacity. The device is structurally based on the 40V Triple-Gate trench MOSFET technology, which offers low on-resistance and fast switching characteristics, allowing the device to be used in a wide range of applications. In this article, we will discuss the application fields and working principle of the NTB75N03RT4G.

Application Fields

The NTB75N03RT4G can be used in a variety of applications, including but not limited to:

• DC-DC converters
• Power supply circuits
• Motor control circuits
• Switching regulators
• Voltage regulator modules (VRM)
• Induction and specialty heaters
• AC-DC power supplies
• Battery Management System (BMS)
• High-current power supply circuits.

In addition, the NTB75N03RT4G can be used as a load switch in laptop computers, consumer electronics, automotive, and industrial applications.

Working Principle

The NTB75N03RT4G is an enhancement mode MOSFET, which means the device can be turned on by applying a positive gate-source voltage. This voltage causes the channel to be inversion, which allows current to flow through the device. The device works on the principle of the field effect, which states that the electrical field created by the applied voltage influences the current flow. The device is enhanced, meaning that it has a low on-resistance as compared to other MOSFETs.The NTB75N03RT4G has an integrated Kelvin sensing circuit that allows it to monitor the shunt resistance and the junctions temperature. The device will shut down if the junctions temperature reaches 175 C or the shunt resistance drops below 10R. This helps to protect the device from damage due to over temperature or short circuit conditions.

Conclusion

The NTB75N03RT4G is an n-channel enhancement mode MOSFET designed for use in a variety of applications. It has excellent high temperature performance, high breakdown voltage, and high current handling capacity. The device can be used in DC-DC converters, power supply circuits, motor control circuits, switching regulators, voltage regulator modules, induction and specialty heaters, AC-DC power supplies, Battery Management System, and high-current power supply circuits. It works on the principle of field effect and has an integrated Kelvin sensing circuit that helps to protect it from damage due to over temperature or short circuit conditions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description