
Allicdata Part #: | NTF3055-100T3G-ND |
Manufacturer Part#: |
NTF3055-100T3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 3A SOT223 |
More Detail: | N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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. NTF3055-100T3G is a popular N-channel obsolete heavy-duty linear power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor), operated at 100 Volts, 30 Amps, and 175 Watts. It is a predominant FET (Field Effect Transistor) suitable for switching applications. With advanced characteristics and superior performance, the NTF3055 is widely used in various everyday applications. The NTF3055-100T3G is an improved version of the existing basic N-channel power MOSFET with improved characteristics, making it far superior to its predecessors.Application Fields for the NTF3055-100T3G The NTF3055-100T3G is suitable for many traditional power MOSFET applications. One of the most common applications for the NTF3055 is in power switches. It can be used to control the power flow between two points. The NTF3055 can also be used to construct an H-bridge in motor control systems. The NTF3055 can also be used in audio applications. It can be used to control the input and output power levels of audio circuits. This allows the user to adjust the gain of the circuit and create a more responsive and powerful sound. The NTF3055 is also useful in a wide range of high-voltage applications. It can handle high voltages up to 175V, making it an ideal choice for high-voltage applications such as television and radio transmitters. In addition, the NTF3055 can be used to control the speed and current of high-voltage motors in industrial applications. Working Principle of the NTF3055-100T3GThe NTF3055 utilizes the basic structure of a MOSFET to obtain its desired function. A MOSFET is a type of transistor composed of a gate, source, and drain. The gate terminal is used to control the flow of the current between the source and drain terminals. The NTF3055 is an N-channel MOSFET, which means the current flows from the drain to the source when the gate is energized. When the gate is not energized, the NTF3055 will become an open switch, which blocks the current flow between the source and drain. The gate of the NTF3055 is controlled by voltage signals. Applying a positive voltage signal to the gate terminal will turn on the NTF3055 and allow current to pass from the drain to the source. Applying a negative voltage signal will turn off the NTF3055 and prevent current from flowing. This allows the NTF3055 to be used to control the current flow between two points.ConclusionThe NTF3055-100T3G is an extremely versatile linear power MOSFET suitable for a wide range of applications.It can handle large currents of up to 30 Amps and high voltages of up to 175V, making it ideal for switching and high-voltage applications. The NTF3055 uses the basic structure of a MOSFET to control the flow of current and operates by voltage signals.
ConclusionThe NTF3055-100T3G is an extremely versatile linear power MOSFET suitable for a wide range of applications.It can handle large currents of up to 30 Amps and high voltages of up to 175V, making it ideal for switching and high-voltage applications. The NTF3055 uses the basic structure of a MOSFET to control the flow of current and operates by voltage signals.
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