Allicdata Part #: | NTF3055-160T3LFOS-ND |
Manufacturer Part#: |
NTF3055-160T3LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 2A SOT223 |
More Detail: | N-Channel 60V 2A (Ta) 1.3W (Ta) Surface Mount SOT-... |
DataSheet: | NTF3055-160T3LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Description
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The NTF3055-160T3LF is a transistor used in a variety of applications and applications. It is a single MOSFET (metal–oxide–semiconductor field-effect transistor) that can be used in various electronic components such as power conversion circuits, control circuits, and signal irradiation circuits. This transistor has a wide range of uses ranging from automotive and industrial applications to consumer electronics.The NTF3055-160T3LF is a single MOSFET transistor, which means it is composed of a single channel between Gate, Drain and Source terminals. Metal oxide semiconductor technology is used to produce the semiconductor material used to create this transistor. This technology allows for a much higher degree of control over the current as it is able to transfer electrons more easily and quickly. An important factor to consider when using this transistor is that the Drain and Gate voltages must be equal in order to function properly.The operating principle of this transistor can be summed up as the following: when voltage is applied to the Gate, it changes the composition of the semiconductor material near the gate, allowing current to flow. This change in composition makes the Gate work as a field-effect transistor, which is essentially a switch that only allows current to flow when subjected to a certain voltage.In terms of applications, the NTF3055-160T3LF is capable of providing significant levels of performance in a wide range of scenarios. This single MOSFET transistor is attenuation is low, meaning that it can be used in power conversion circuits for both DC and AC applications. It is also capable of providing the power needed to control constant-voltage applications since it is able to manage a higher drain-to-source voltage.The NTF3055-160T3LF can be used in linear circuits, since it has a higher linearity coefficient compared to other MOSFETs. In addition to this, it is also suitable for use in switching applications as it has a low on-state resistance and can be used to control current with a low voltage swing.Finally, the NTF3055-160T3LF is useful in signal irradiation circuits due to its low capacitance structure. This allows it to be used in applications that require high-frequency operations, such as radio frequency systems. Furthermore, this transistor can be used in systems that require precise control of the signal, making it an invaluable asset in various types of communication systems.In conclusion, the NTF3055-160T3LF is a single MOSFET transistor that can be used in a variety of applications due to its wide range of capabilities. It is composed of a single channel comprised of a metal–oxide–semiconductor material, and it can be used in power conversion circuits, control circuits, and signal irradiation circuits. The NTF3055-160T3LF has a low attenuation level, which makes it suitable for use in a variety of different applications. The transistor can also provide a precise control of the current and precise control of the signal, making it a valuable asset for all forms of electronic components.The specific data is subject to PDF, and the above content is for reference
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